S29GL128S10TFI010 Cypress Semiconductor Corp IC FLASH 128MBIT 100NS 56TSOP
Интегральные схемы (ИС) 56-TFSOP (0.724", 18.40mm Width)
Номер производителя:
S29GL128S10TFI010
Производитель:
Категория продукции:
Описание:
IC FLASH 128MBIT 100NS 56TSOP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
S29GL128S10TFI010 Таблицы данных(PDF)
Access Time :
100ns
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
128Mb (8M x 16)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
56-TFSOP (0.724", 18.40mm Width)
Packaging :
Tray
Part Status :
Active
Series :
GL-S
Supplier Device Package :
56-TSOP
Technology :
FLASH - NOR
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
60ns
в наличии
32,839
Unit Price:
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S29GL128S10TFI010 Конкурентные цены
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S29GL128S10TFI010 Особенности
S29GL128S10TFI010 is produced by Cypress Semiconductor Corp, belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 56-TFSOP (0.724", 18.40mm Width), and Tray is its most common packaging method, which belongs to the GL-S series, using 56-TSOP, 2.7 V ~ 3.6 V is the most suitable voltage.
S29GL128S10TFI010 Подробная информация о продукции
:
S29GL128S10TFI010 — это объем памяти, буферные усилители, разработанные и
произведенные
Cypress Semiconductor Corp.
S29GL128S10TFI010 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S29GL128S10TFI010 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S29GL128S10TFI010 (PDF), цена S29GL128S10TFI010, Распиновка S29GL128S10TFI010, руководство S29GL128S10TFI010 и решение на замену S29GL128S10TFI010.
S29GL128S10TFI010 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S29GL128S10TFI010 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S29GL128S10TFI010 (PDF), цена S29GL128S10TFI010, Распиновка S29GL128S10TFI010, руководство S29GL128S10TFI010 и решение на замену S29GL128S10TFI010.
S29GL128S10TFI010 FAQ
:
1. What is the maximum operating frequency of the S29GL128S10TFI010 flash memory?
The maximum operating frequency of the S29GL128S10TFI010 flash memory is 66 MHz.
2. What is the typical power consumption of the S29GL128S10TFI010 during read operations?
The typical power consumption of the S29GL128S10TFI010 during read operations is 50 mA.
3. Can the S29GL128S10TFI010 operate at industrial temperature ranges?
Yes, the S29GL128S10TFI010 is designed to operate at industrial temperature ranges from -40°C to 85°C.
4. What are the voltage requirements for programming the S29GL128S10TFI010?
The voltage requirements for programming the S29GL128S10TFI010 range from 2.7V to 3.6V.
5. Does the S29GL128S10TFI010 support simultaneous read and write operations?
Yes, the S29GL128S10TFI010 supports simultaneous read and write operations.
6. What is the maximum data retention period of the S29GL128S10TFI010?
The maximum data retention period of the S29GL128S10TFI010 is 20 years.
7. Is the S29GL128S10TFI010 compatible with common flash memory interfaces such as SPI and I2C?
Yes, the S29GL128S10TFI010 is compatible with common flash memory interfaces including SPI and I2C.
8. What is the erase time for a sector of the S29GL128S10TFI010?
The erase time for a sector of the S29GL128S10TFI010 is typically 2 milliseconds.
9. Can the S29GL128S10TFI010 be used in automotive applications?
Yes, the S29GL128S10TFI010 is suitable for use in automotive applications.
10. What is the maximum program/erase cycle endurance of the S29GL128S10TFI010?
The S29GL128S10TFI010 has a maximum program/erase cycle endurance of 100,000 cycles.
The maximum operating frequency of the S29GL128S10TFI010 flash memory is 66 MHz.
2. What is the typical power consumption of the S29GL128S10TFI010 during read operations?
The typical power consumption of the S29GL128S10TFI010 during read operations is 50 mA.
3. Can the S29GL128S10TFI010 operate at industrial temperature ranges?
Yes, the S29GL128S10TFI010 is designed to operate at industrial temperature ranges from -40°C to 85°C.
4. What are the voltage requirements for programming the S29GL128S10TFI010?
The voltage requirements for programming the S29GL128S10TFI010 range from 2.7V to 3.6V.
5. Does the S29GL128S10TFI010 support simultaneous read and write operations?
Yes, the S29GL128S10TFI010 supports simultaneous read and write operations.
6. What is the maximum data retention period of the S29GL128S10TFI010?
The maximum data retention period of the S29GL128S10TFI010 is 20 years.
7. Is the S29GL128S10TFI010 compatible with common flash memory interfaces such as SPI and I2C?
Yes, the S29GL128S10TFI010 is compatible with common flash memory interfaces including SPI and I2C.
8. What is the erase time for a sector of the S29GL128S10TFI010?
The erase time for a sector of the S29GL128S10TFI010 is typically 2 milliseconds.
9. Can the S29GL128S10TFI010 be used in automotive applications?
Yes, the S29GL128S10TFI010 is suitable for use in automotive applications.
10. What is the maximum program/erase cycle endurance of the S29GL128S10TFI010?
The S29GL128S10TFI010 has a maximum program/erase cycle endurance of 100,000 cycles.
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