S30ML512P50TFI010 Cypress Semiconductor Corp IC FLASH MEMORY 48TSOP
Интегральные схемы (ИС) -
Номер производителя:
S30ML512P50TFI010
Производитель:
Категория продукции:
Описание:
IC FLASH MEMORY 48TSOP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
Access Time :
-
Clock Frequency :
-
Memory Format :
-
Memory Interface :
-
Memory Size :
-
Memory Type :
-
Mounting Type :
-
Operating Temperature :
-
Package / Case :
-
Packaging :
-
Part Status :
Obsolete
Series :
Supplier Device Package :
-
Technology :
-
Voltage - Supply :
-
Write Cycle Time - Word, Page :
-
в наличии
32,414
Unit Price:
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Предложение
S30ML512P50TFI010 Конкурентные цены
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S30ML512P50TFI010 Особенности
S30ML512P50TFI010 is produced by Cypress Semiconductor Corp, belongs to объем памяти, and its best working temperature is -, the size is -, and - is its most common packaging method, which belongs to the series, using -, - is the most suitable voltage.
S30ML512P50TFI010 Подробная информация о продукции
:
S30ML512P50TFI010 — это объем памяти, буферные усилители, разработанные и
произведенные
Cypress Semiconductor Corp.
S30ML512P50TFI010 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S30ML512P50TFI010 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S30ML512P50TFI010 (PDF), цена S30ML512P50TFI010, Распиновка S30ML512P50TFI010, руководство S30ML512P50TFI010 и решение на замену S30ML512P50TFI010.
S30ML512P50TFI010 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S30ML512P50TFI010 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S30ML512P50TFI010 (PDF), цена S30ML512P50TFI010, Распиновка S30ML512P50TFI010, руководство S30ML512P50TFI010 и решение на замену S30ML512P50TFI010.
S30ML512P50TFI010 FAQ
:
1. What is the maximum operating frequency of the S30ML512P50TFI010 NAND flash memory?
The maximum operating frequency of the S30ML512P50TFI010 NAND flash memory is 50MHz.
2. What is the typical power consumption of the S30ML512P50TFI010 NAND flash memory during read operations?
The typical power consumption of the S30ML512P50TFI010 NAND flash memory during read operations is 25mA.
3. Can the S30ML512P50TFI010 NAND flash memory be operated at temperatures below freezing?
Yes, the S30ML512P50TFI010 NAND flash memory can be operated at temperatures as low as -40°C.
4. What is the data retention period of the S30ML512P50TFI010 NAND flash memory?
The data retention period of the S30ML512P50TFI010 NAND flash memory is 10 years.
5. Does the S30ML512P50TFI010 NAND flash memory support hardware data protection features?
Yes, the S30ML512P50TFI010 NAND flash memory supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What are the available package options for the S30ML512P50TFI010 NAND flash memory?
The S30ML512P50TFI010 NAND flash memory is available in a 48-ball FBGA (Fine-pitch Ball Grid Array) package.
7. Is the S30ML512P50TFI010 NAND flash memory compatible with 3.3V and 1.8V supply voltages?
Yes, the S30ML512P50TFI010 NAND flash memory is compatible with both 3.3V and 1.8V supply voltages.
8. What is the maximum program/erase cycle endurance of the S30ML512P50TFI010 NAND flash memory?
The maximum program/erase cycle endurance of the S30ML512P50TFI010 NAND flash memory is 100,000 cycles.
9. Can the S30ML512P50TFI010 NAND flash memory operate in industrial temperature ranges?
Yes, the S30ML512P50TFI010 NAND flash memory is designed to operate in industrial temperature ranges from -40°C to 85°C.
10. Does the S30ML512P50TFI010 NAND flash memory support automatic bad block management?
Yes, the S30ML512P50TFI010 NAND flash memory supports automatic bad block management to enhance reliability and lifespan.
The maximum operating frequency of the S30ML512P50TFI010 NAND flash memory is 50MHz.
2. What is the typical power consumption of the S30ML512P50TFI010 NAND flash memory during read operations?
The typical power consumption of the S30ML512P50TFI010 NAND flash memory during read operations is 25mA.
3. Can the S30ML512P50TFI010 NAND flash memory be operated at temperatures below freezing?
Yes, the S30ML512P50TFI010 NAND flash memory can be operated at temperatures as low as -40°C.
4. What is the data retention period of the S30ML512P50TFI010 NAND flash memory?
The data retention period of the S30ML512P50TFI010 NAND flash memory is 10 years.
5. Does the S30ML512P50TFI010 NAND flash memory support hardware data protection features?
Yes, the S30ML512P50TFI010 NAND flash memory supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What are the available package options for the S30ML512P50TFI010 NAND flash memory?
The S30ML512P50TFI010 NAND flash memory is available in a 48-ball FBGA (Fine-pitch Ball Grid Array) package.
7. Is the S30ML512P50TFI010 NAND flash memory compatible with 3.3V and 1.8V supply voltages?
Yes, the S30ML512P50TFI010 NAND flash memory is compatible with both 3.3V and 1.8V supply voltages.
8. What is the maximum program/erase cycle endurance of the S30ML512P50TFI010 NAND flash memory?
The maximum program/erase cycle endurance of the S30ML512P50TFI010 NAND flash memory is 100,000 cycles.
9. Can the S30ML512P50TFI010 NAND flash memory operate in industrial temperature ranges?
Yes, the S30ML512P50TFI010 NAND flash memory is designed to operate in industrial temperature ranges from -40°C to 85°C.
10. Does the S30ML512P50TFI010 NAND flash memory support automatic bad block management?
Yes, the S30ML512P50TFI010 NAND flash memory supports automatic bad block management to enhance reliability and lifespan.
S30ML512P50TFI010 Связанные ключевые слова
:
S30ML512P50TFI010 Цена
S30ML512P50TFI010 Картина
S30ML512P50TFI010 Напряжение на выводе
Акции: Быстрая проверка котировок
Минимальный заказ: 1
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