S34ML01G204TFI013 Cypress Semiconductor Corp IC FLASH 1GBIT 25NS 48TSOP
Интегральные схемы (ИС) 48-TFSOP (0.724", 18.40mm Width)
Номер производителя:
S34ML01G204TFI013
Производитель:
Категория продукции:
Описание:
IC FLASH 1GBIT 25NS 48TSOP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
S34ML01G204TFI013 Таблицы данных(PDF)
Access Time :
-
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
1Gb (64M x 16)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
48-TFSOP (0.724", 18.40mm Width)
Packaging :
Tape & Reel (TR)
Part Status :
Active
Series :
ML-2
Supplier Device Package :
48-TSOP I
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
25ns
в наличии
40,654
Unit Price:
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S34ML01G204TFI013 Конкурентные цены
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S34ML01G204TFI013 Особенности
S34ML01G204TFI013 is produced by Cypress Semiconductor Corp, belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 48-TFSOP (0.724", 18.40mm Width), and Tape & Reel (TR) is its most common packaging method, which belongs to the ML-2 series, using 48-TSOP I, 2.7 V ~ 3.6 V is the most suitable voltage.
S34ML01G204TFI013 Подробная информация о продукции
:
S34ML01G204TFI013 — это объем памяти, буферные усилители, разработанные и
произведенные
Cypress Semiconductor Corp.
S34ML01G204TFI013 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S34ML01G204TFI013 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S34ML01G204TFI013 (PDF), цена S34ML01G204TFI013, Распиновка S34ML01G204TFI013, руководство S34ML01G204TFI013 и решение на замену S34ML01G204TFI013.
S34ML01G204TFI013 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S34ML01G204TFI013 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S34ML01G204TFI013 (PDF), цена S34ML01G204TFI013, Распиновка S34ML01G204TFI013, руководство S34ML01G204TFI013 и решение на замену S34ML01G204TFI013.
S34ML01G204TFI013 FAQ
:
1. What is the storage capacity of the S34ML01G204TFI013 NAND flash memory?
The S34ML01G204TFI013 NAND flash memory has a storage capacity of 1Gbit.
2. What interface does the S34ML01G204TFI013 use for data transfer?
The S34ML01G204TFI013 uses a standard ONFI 2.3-compliant interface for data transfer.
3. Can the S34ML01G204TFI013 operate at industrial temperature ranges?
Yes, the S34ML01G204TFI013 is designed to operate reliably within industrial temperature ranges.
4. What is the maximum clock frequency supported by the S34ML01G204TFI013?
The S34ML01G204TFI013 supports a maximum clock frequency of 50MHz for high-speed data transfer.
5. Does the S34ML01G204TFI013 support hardware-based write protection?
Yes, the S34ML01G204TFI013 features hardware-based write protection to prevent unauthorized data modification.
6. What is the typical power consumption of the S34ML01G204TFI013 during read operations?
The typical power consumption of the S34ML01G204TFI013 during read operations is 25mA (typical).
7. Is the S34ML01G204TFI013 compatible with various error correction codes (ECC)?
Yes, the S34ML01G204TFI013 is compatible with various ECC schemes to ensure data integrity.
8. What are the recommended voltage levels for the S34ML01G204TFI013?
The S34ML01G204TFI013 operates at a voltage range of 2.7V to 3.6V for reliable performance.
9. Can the S34ML01G204TFI013 be used in automotive applications?
Yes, the S34ML01G204TFI013 is suitable for automotive applications due to its robust design and reliability.
10. Does the S34ML01G204TFI013 support advanced wear-leveling algorithms?
Yes, the S34ML01G204TFI013 incorporates advanced wear-leveling algorithms to extend its lifespan and ensure uniform usage across memory cells.
The S34ML01G204TFI013 NAND flash memory has a storage capacity of 1Gbit.
2. What interface does the S34ML01G204TFI013 use for data transfer?
The S34ML01G204TFI013 uses a standard ONFI 2.3-compliant interface for data transfer.
3. Can the S34ML01G204TFI013 operate at industrial temperature ranges?
Yes, the S34ML01G204TFI013 is designed to operate reliably within industrial temperature ranges.
4. What is the maximum clock frequency supported by the S34ML01G204TFI013?
The S34ML01G204TFI013 supports a maximum clock frequency of 50MHz for high-speed data transfer.
5. Does the S34ML01G204TFI013 support hardware-based write protection?
Yes, the S34ML01G204TFI013 features hardware-based write protection to prevent unauthorized data modification.
6. What is the typical power consumption of the S34ML01G204TFI013 during read operations?
The typical power consumption of the S34ML01G204TFI013 during read operations is 25mA (typical).
7. Is the S34ML01G204TFI013 compatible with various error correction codes (ECC)?
Yes, the S34ML01G204TFI013 is compatible with various ECC schemes to ensure data integrity.
8. What are the recommended voltage levels for the S34ML01G204TFI013?
The S34ML01G204TFI013 operates at a voltage range of 2.7V to 3.6V for reliable performance.
9. Can the S34ML01G204TFI013 be used in automotive applications?
Yes, the S34ML01G204TFI013 is suitable for automotive applications due to its robust design and reliability.
10. Does the S34ML01G204TFI013 support advanced wear-leveling algorithms?
Yes, the S34ML01G204TFI013 incorporates advanced wear-leveling algorithms to extend its lifespan and ensure uniform usage across memory cells.
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