S34ML16G202BHI003 Cypress Semiconductor Corp IC FLASH 16GBIT 25NS 63BGA
Интегральные схемы (ИС) 63-VFBGA
Номер производителя:
S34ML16G202BHI003
Производитель:
Категория продукции:
Описание:
IC FLASH 16GBIT 25NS 63BGA
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
S34ML16G202BHI003 Таблицы данных(PDF)
Access Time :
-
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
16Gb (2G x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
63-VFBGA
Packaging :
Tape & Reel (TR)
Part Status :
Active
Series :
ML-2
Supplier Device Package :
63-BGA (11x9)
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
25ns
в наличии
40,035
Unit Price:
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Предложение
S34ML16G202BHI003 Конкурентные цены
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S34ML16G202BHI003 Особенности
S34ML16G202BHI003 is produced by Cypress Semiconductor Corp, belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 63-VFBGA, and Tape & Reel (TR) is its most common packaging method, which belongs to the ML-2 series, using 63-BGA (11x9), 2.7 V ~ 3.6 V is the most suitable voltage.
S34ML16G202BHI003 Подробная информация о продукции
:
S34ML16G202BHI003 — это объем памяти, буферные усилители, разработанные и
произведенные
Cypress Semiconductor Corp.
S34ML16G202BHI003 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S34ML16G202BHI003 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S34ML16G202BHI003 (PDF), цена S34ML16G202BHI003, Распиновка S34ML16G202BHI003, руководство S34ML16G202BHI003 и решение на замену S34ML16G202BHI003.
S34ML16G202BHI003 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S34ML16G202BHI003 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S34ML16G202BHI003 (PDF), цена S34ML16G202BHI003, Распиновка S34ML16G202BHI003, руководство S34ML16G202BHI003 и решение на замену S34ML16G202BHI003.
S34ML16G202BHI003 FAQ
:
1. What is the maximum capacity of the S34ML16G202BHI003 NAND flash memory?
The S34ML16G202BHI003 NAND flash memory has a maximum capacity of 16 gigabits.
2. What interface does the S34ML16G202BHI003 use for data transfer?
The S34ML16G202BHI003 uses a standard ONFI 2.3-compliant asynchronous interface for data transfer.
3. Can the S34ML16G202BHI003 operate at industrial temperature ranges?
Yes, the S34ML16G202BHI003 is designed to operate reliably within industrial temperature ranges.
4. What is the typical power consumption of the S34ML16G202BHI003 during read and program operations?
The typical power consumption of the S34ML16G202BHI003 during read operations is 25 mA, and during program operations, it is 30 mA.
5. Does the S34ML16G202BHI003 support hardware-based write protection?
Yes, the S34ML16G202BHI003 supports hardware-based write protection to prevent unauthorized data modification.
6. What are the typical erase and program times for the S34ML16G202BHI003?
The typical erase time for the S34ML16G202BHI003 is 2 milliseconds, and the typical program time is 200 microseconds per page.
7. Is the S34ML16G202BHI003 compatible with various error correction codes (ECC)?
Yes, the S34ML16G202BHI003 is compatible with various ECC options, including BCH and Reed-Solomon codes.
8. What is the data retention period of the S34ML16G202BHI003 under specified conditions?
The S34ML16G202BHI003 offers a minimum data retention period of 10 years under specified operating conditions.
9. Can the S34ML16G202BHI003 be used in automotive applications?
Yes, the S34ML16G202BHI003 is suitable for automotive applications and complies with relevant industry standards.
10. Does the S34ML16G202BHI003 incorporate advanced wear-leveling algorithms?
Yes, the S34ML16G202BHI003 incorporates advanced wear-leveling algorithms to ensure uniform usage of memory blocks and extend the lifespan of the device.
The S34ML16G202BHI003 NAND flash memory has a maximum capacity of 16 gigabits.
2. What interface does the S34ML16G202BHI003 use for data transfer?
The S34ML16G202BHI003 uses a standard ONFI 2.3-compliant asynchronous interface for data transfer.
3. Can the S34ML16G202BHI003 operate at industrial temperature ranges?
Yes, the S34ML16G202BHI003 is designed to operate reliably within industrial temperature ranges.
4. What is the typical power consumption of the S34ML16G202BHI003 during read and program operations?
The typical power consumption of the S34ML16G202BHI003 during read operations is 25 mA, and during program operations, it is 30 mA.
5. Does the S34ML16G202BHI003 support hardware-based write protection?
Yes, the S34ML16G202BHI003 supports hardware-based write protection to prevent unauthorized data modification.
6. What are the typical erase and program times for the S34ML16G202BHI003?
The typical erase time for the S34ML16G202BHI003 is 2 milliseconds, and the typical program time is 200 microseconds per page.
7. Is the S34ML16G202BHI003 compatible with various error correction codes (ECC)?
Yes, the S34ML16G202BHI003 is compatible with various ECC options, including BCH and Reed-Solomon codes.
8. What is the data retention period of the S34ML16G202BHI003 under specified conditions?
The S34ML16G202BHI003 offers a minimum data retention period of 10 years under specified operating conditions.
9. Can the S34ML16G202BHI003 be used in automotive applications?
Yes, the S34ML16G202BHI003 is suitable for automotive applications and complies with relevant industry standards.
10. Does the S34ML16G202BHI003 incorporate advanced wear-leveling algorithms?
Yes, the S34ML16G202BHI003 incorporates advanced wear-leveling algorithms to ensure uniform usage of memory blocks and extend the lifespan of the device.
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S34ML16G202BHI003 Напряжение на выводе
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Минимальный заказ: 1
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