IX6R11S3T/R IXYS IC DRVR HALF BRIDGE 4A 16-SOIC
Интегральные схемы (ИС) 16-SOIC (0.295", 7.50mm Width)
Номер производителя:
IX6R11S3T/R
Производитель:
Категория продукции:
Описание:
IC DRVR HALF BRIDGE 4A 16-SOIC
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
IX6R11S3T/R Таблицы данных(PDF)
Channel Type :
Independent
Current - Peak Output (Source, Sink) :
6A, 6A
Driven Configuration :
Half-Bridge
Gate Type :
IGBT, N-Channel MOSFET
High Side Voltage - Max (Bootstrap) :
600V
Input Type :
Non-Inverting
Logic Voltage - VIL, VIH :
6V, 9.6V
Mounting Type :
Surface Mount
Number of Drivers :
2
Operating Temperature :
-40°C ~ 125°C (TA)
Package / Case :
16-SOIC (0.295", 7.50mm Width)
Packaging :
Tape & Reel (TR)
Part Status :
Obsolete
Rise / Fall Time (Typ) :
25ns, 17ns
Series :
-
Supplier Device Package :
16-SOIC
Voltage - Supply :
10 V ~ 35 V
в наличии
37,829
Unit Price:
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Предложение
IX6R11S3T/R Конкурентные цены
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IX6R11S3T/R Особенности
IX6R11S3T/R is produced by IXYS, belongs to PMIC - драйверы Gate, and its best working temperature is -40°C ~ 125°C (TA), the size is 16-SOIC (0.295", 7.50mm Width), and Tape & Reel (TR) is its most common packaging method, which belongs to the - series, using 16-SOIC, 10 V ~ 35 V is the most suitable voltage.
IX6R11S3T/R Подробная информация о продукции
:
IX6R11S3T/R — это PMIC - драйверы Gate, буферные усилители, разработанные и
произведенные
IXYS.
IX6R11S3T/R производства IXYS можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
IX6R11S3T/R компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных IX6R11S3T/R (PDF), цена IX6R11S3T/R, Распиновка IX6R11S3T/R, руководство IX6R11S3T/R и решение на замену IX6R11S3T/R.
IX6R11S3T/R производства IXYS можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
IX6R11S3T/R компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных IX6R11S3T/R (PDF), цена IX6R11S3T/R, Распиновка IX6R11S3T/R, руководство IX6R11S3T/R и решение на замену IX6R11S3T/R.
IX6R11S3T/R FAQ
:
1. What is the maximum operating temperature of the IX6R11S3T/R semiconductor?
The maximum operating temperature of the IX6R11S3T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX6R11S3T/R diode at a current of 10mA?
The typical forward voltage drop for the IX6R11S3T/R diode at a current of 10mA is 0.7V.
3. Can the IX6R11S3T/R semiconductor be used in high-frequency applications?
Yes, the IX6R11S3T/R semiconductor can be used in high-frequency applications due to its low capacitance and fast switching characteristics.
4. What is the maximum continuous forward current rating for the IX6R11S3T/R diode?
The maximum continuous forward current rating for the IX6R11S3T/R diode is 200mA.
5. Does the IX6R11S3T/R semiconductor require a heat sink for operation?
It is recommended to use a heat sink for the IX6R11S3T/R semiconductor when operating at high currents or in elevated ambient temperatures to ensure optimal performance and reliability.
6. What is the reverse recovery time of the IX6R11S3T/R diode?
The reverse recovery time of the IX6R11S3T/R diode is typically 50ns.
7. Is the IX6R11S3T/R semiconductor RoHS compliant?
Yes, the IX6R11S3T/R semiconductor is RoHS compliant, meeting the requirements for lead-free and environmentally friendly manufacturing.
8. What is the maximum reverse voltage rating for the IX6R11S3T/R diode?
The maximum reverse voltage rating for the IX6R11S3T/R diode is 75V.
9. Can the IX6R11S3T/R semiconductor withstand mechanical shock and vibration?
Yes, the IX6R11S3T/R semiconductor is designed to withstand mechanical shock and vibration within specified limits as outlined in the datasheet.
10. What is the typical junction capacitance of the IX6R11S3T/R diode at a reverse bias of 5V?
The typical junction capacitance of the IX6R11S3T/R diode at a reverse bias of 5V is 15pF.
The maximum operating temperature of the IX6R11S3T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX6R11S3T/R diode at a current of 10mA?
The typical forward voltage drop for the IX6R11S3T/R diode at a current of 10mA is 0.7V.
3. Can the IX6R11S3T/R semiconductor be used in high-frequency applications?
Yes, the IX6R11S3T/R semiconductor can be used in high-frequency applications due to its low capacitance and fast switching characteristics.
4. What is the maximum continuous forward current rating for the IX6R11S3T/R diode?
The maximum continuous forward current rating for the IX6R11S3T/R diode is 200mA.
5. Does the IX6R11S3T/R semiconductor require a heat sink for operation?
It is recommended to use a heat sink for the IX6R11S3T/R semiconductor when operating at high currents or in elevated ambient temperatures to ensure optimal performance and reliability.
6. What is the reverse recovery time of the IX6R11S3T/R diode?
The reverse recovery time of the IX6R11S3T/R diode is typically 50ns.
7. Is the IX6R11S3T/R semiconductor RoHS compliant?
Yes, the IX6R11S3T/R semiconductor is RoHS compliant, meeting the requirements for lead-free and environmentally friendly manufacturing.
8. What is the maximum reverse voltage rating for the IX6R11S3T/R diode?
The maximum reverse voltage rating for the IX6R11S3T/R diode is 75V.
9. Can the IX6R11S3T/R semiconductor withstand mechanical shock and vibration?
Yes, the IX6R11S3T/R semiconductor is designed to withstand mechanical shock and vibration within specified limits as outlined in the datasheet.
10. What is the typical junction capacitance of the IX6R11S3T/R diode at a reverse bias of 5V?
The typical junction capacitance of the IX6R11S3T/R diode at a reverse bias of 5V is 15pF.
IX6R11S3T/R Связанные ключевые слова
:
IX6R11S3T/R Цена
IX6R11S3T/R Картина
IX6R11S3T/R Напряжение на выводе
Акции: Быстрая проверка котировок
Минимальный заказ: 1
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