MT29F128G08EBEBBWPES:B TR Micron Technology Inc. IC FLASH 128GBIT 48TSOP
Интегральные схемы (ИС) -
Номер производителя:
MT29F128G08EBEBBWPES:B TR
Производитель:
Категория продукции:
Описание:
IC FLASH 128GBIT 48TSOP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
Access Time :
-
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
128Gb (16G x 8)
Memory Type :
Non-Volatile
Mounting Type :
-
Operating Temperature :
0°C ~ 70°C (TA)
Package / Case :
-
Packaging :
Tape & Reel (TR)
Part Status :
Obsolete
Series :
-
Supplier Device Package :
-
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
-
в наличии
53,777
Unit Price:
Свяжитесь с нами
Предложение
MT29F128G08EBEBBWPES:B TR Конкурентные цены
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конкурентоспособную цену для наших клиентов. Вы можете насладиться нашим лучшим
сервисом, купив ChipIc MT29F128G08EBEBBWPES:B TR. Пожалуйста, не стесняйтесь обращаться по поводу
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MT29F128G08EBEBBWPES:B TR Особенности
MT29F128G08EBEBBWPES:B TR is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is 0°C ~ 70°C (TA), the size is -, and Tape & Reel (TR) is its most common packaging method, which belongs to the - series, using -, 2.7 V ~ 3.6 V is the most suitable voltage.
MT29F128G08EBEBBWPES:B TR Подробная информация о продукции
:
MT29F128G08EBEBBWPES:B TR — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MT29F128G08EBEBBWPES:B TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F128G08EBEBBWPES:B TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F128G08EBEBBWPES:B TR (PDF), цена MT29F128G08EBEBBWPES:B TR, Распиновка MT29F128G08EBEBBWPES:B TR, руководство MT29F128G08EBEBBWPES:B TR и решение на замену MT29F128G08EBEBBWPES:B TR.
MT29F128G08EBEBBWPES:B TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F128G08EBEBBWPES:B TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F128G08EBEBBWPES:B TR (PDF), цена MT29F128G08EBEBBWPES:B TR, Распиновка MT29F128G08EBEBBWPES:B TR, руководство MT29F128G08EBEBBWPES:B TR и решение на замену MT29F128G08EBEBBWPES:B TR.
MT29F128G08EBEBBWPES:B TR FAQ
:
1. What is the maximum capacity of the MT29F128G08EBEBBWPES:B TR NAND flash memory?
The MT29F128G08EBEBBWPES:B TR NAND flash memory has a maximum capacity of 128 gigabytes.
2. What interface does the MT29F128G08EBEBBWPES:B TR use for data transfer?
The MT29F128G08EBEBBWPES:B TR uses a standard NAND flash interface for data transfer.
3. Can the MT29F128G08EBEBBWPES:B TR operate at industrial temperature ranges?
Yes, the MT29F128G08EBEBBWPES:B TR is designed to operate at industrial temperature ranges.
4. What is the typical power consumption of the MT29F128G08EBEBBWPES:B TR during read and write operations?
The typical power consumption of the MT29F128G08EBEBBWPES:B TR during read and write operations is low, making it suitable for power-sensitive applications.
5. Does the MT29F128G08EBEBBWPES:B TR support hardware-based data protection features?
Yes, the MT29F128G08EBEBBWPES:B TR supports hardware-based data protection features to ensure data integrity and security.
6. What are the recommended operating voltage levels for the MT29F128G08EBEBBWPES:B TR?
The recommended operating voltage levels for the MT29F128G08EBEBBWPES:B TR are within the specified range provided in the datasheet.
7. Is the MT29F128G08EBEBBWPES:B TR compatible with various NAND flash controllers?
Yes, the MT29F128G08EBEBBWPES:B TR is designed to be compatible with a wide range of NAND flash controllers for ease of integration.
8. Can the MT29F128G08EBEBBWPES:B TR support advanced wear-leveling algorithms?
Yes, the MT29F128G08EBEBBWPES:B TR is capable of supporting advanced wear-leveling algorithms to extend its lifespan and reliability.
9. What is the typical program and erase cycle endurance of the MT29F128G08EBEBBWPES:B TR?
The MT29F128G08EBEBBWPES:B TR offers a high program and erase cycle endurance, ensuring long-term reliability in demanding applications.
10. Does the MT29F128G08EBEBBWPES:B TR provide built-in error correction capabilities?
Yes, the MT29F128G08EBEBBWPES:B TR incorporates built-in error correction capabilities to maintain data accuracy and integrity.
The MT29F128G08EBEBBWPES:B TR NAND flash memory has a maximum capacity of 128 gigabytes.
2. What interface does the MT29F128G08EBEBBWPES:B TR use for data transfer?
The MT29F128G08EBEBBWPES:B TR uses a standard NAND flash interface for data transfer.
3. Can the MT29F128G08EBEBBWPES:B TR operate at industrial temperature ranges?
Yes, the MT29F128G08EBEBBWPES:B TR is designed to operate at industrial temperature ranges.
4. What is the typical power consumption of the MT29F128G08EBEBBWPES:B TR during read and write operations?
The typical power consumption of the MT29F128G08EBEBBWPES:B TR during read and write operations is low, making it suitable for power-sensitive applications.
5. Does the MT29F128G08EBEBBWPES:B TR support hardware-based data protection features?
Yes, the MT29F128G08EBEBBWPES:B TR supports hardware-based data protection features to ensure data integrity and security.
6. What are the recommended operating voltage levels for the MT29F128G08EBEBBWPES:B TR?
The recommended operating voltage levels for the MT29F128G08EBEBBWPES:B TR are within the specified range provided in the datasheet.
7. Is the MT29F128G08EBEBBWPES:B TR compatible with various NAND flash controllers?
Yes, the MT29F128G08EBEBBWPES:B TR is designed to be compatible with a wide range of NAND flash controllers for ease of integration.
8. Can the MT29F128G08EBEBBWPES:B TR support advanced wear-leveling algorithms?
Yes, the MT29F128G08EBEBBWPES:B TR is capable of supporting advanced wear-leveling algorithms to extend its lifespan and reliability.
9. What is the typical program and erase cycle endurance of the MT29F128G08EBEBBWPES:B TR?
The MT29F128G08EBEBBWPES:B TR offers a high program and erase cycle endurance, ensuring long-term reliability in demanding applications.
10. Does the MT29F128G08EBEBBWPES:B TR provide built-in error correction capabilities?
Yes, the MT29F128G08EBEBBWPES:B TR incorporates built-in error correction capabilities to maintain data accuracy and integrity.
MT29F128G08EBEBBWPES:B TR Связанные ключевые слова
:
MT29F128G08EBEBBWPES:B TR Цена
MT29F128G08EBEBBWPES:B TR Картина
MT29F128G08EBEBBWPES:B TR Напряжение на выводе
Акции: Быстрая проверка котировок
Минимальный заказ: 1
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