MT29F1G08ABADAWP-E:D Micron Technology Inc. IC FLASH 1GBIT 48TSOP
Интегральные схемы (ИС) -
Номер производителя:
MT29F1G08ABADAWP-E:D
Производитель:
Категория продукции:
Описание:
IC FLASH 1GBIT 48TSOP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
Access Time :
-
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
1Gb (128M x 8)
Memory Type :
Non-Volatile
Mounting Type :
-
Operating Temperature :
0°C ~ 70°C (TA)
Package / Case :
-
Packaging :
-
Part Status :
Active
Series :
-
Supplier Device Package :
-
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
-
в наличии
29,872
Unit Price:
Свяжитесь с нами
Предложение
MT29F1G08ABADAWP-E:D Конкурентные цены
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MT29F1G08ABADAWP-E:D Особенности
MT29F1G08ABADAWP-E:D is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is 0°C ~ 70°C (TA), the size is -, and - is its most common packaging method, which belongs to the - series, using -, 2.7 V ~ 3.6 V is the most suitable voltage.
MT29F1G08ABADAWP-E:D Подробная информация о продукции
:
MT29F1G08ABADAWP-E:D — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MT29F1G08ABADAWP-E:D производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F1G08ABADAWP-E:D компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F1G08ABADAWP-E:D (PDF), цена MT29F1G08ABADAWP-E:D, Распиновка MT29F1G08ABADAWP-E:D, руководство MT29F1G08ABADAWP-E:D и решение на замену MT29F1G08ABADAWP-E:D.
MT29F1G08ABADAWP-E:D производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F1G08ABADAWP-E:D компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F1G08ABADAWP-E:D (PDF), цена MT29F1G08ABADAWP-E:D, Распиновка MT29F1G08ABADAWP-E:D, руководство MT29F1G08ABADAWP-E:D и решение на замену MT29F1G08ABADAWP-E:D.
MT29F1G08ABADAWP-E:D FAQ
:
1. What is the maximum operating frequency of the MT29F1G08ABADAWP-E:D NAND flash memory?
The maximum operating frequency of the MT29F1G08ABADAWP-E:D NAND flash memory is 50MHz.
2. What is the typical power consumption of the MT29F1G08ABADAWP-E:D NAND flash memory during read operations?
The typical power consumption of the MT29F1G08ABADAWP-E:D NAND flash memory during read operations is 25mA.
3. Can the MT29F1G08ABADAWP-E:D NAND flash memory withstand high temperatures?
Yes, the MT29F1G08ABADAWP-E:D NAND flash memory is designed to withstand high temperatures up to 85°C.
4. What is the data retention period of the MT29F1G08ABADAWP-E:D NAND flash memory?
The data retention period of the MT29F1G08ABADAWP-E:D NAND flash memory is 10 years.
5. Does the MT29F1G08ABADAWP-E:D NAND flash memory support hardware data protection features?
Yes, the MT29F1G08ABADAWP-E:D NAND flash memory supports hardware data protection features such as ECC (Error Correction Code).
6. What is the interface voltage range supported by the MT29F1G08ABADAWP-E:D NAND flash memory?
The interface voltage range supported by the MT29F1G08ABADAWP-E:D NAND flash memory is 1.7V to 1.95V.
7. Is the MT29F1G08ABADAWP-E:D NAND flash memory compatible with industrial-grade applications?
Yes, the MT29F1G08ABADAWP-E:D NAND flash memory is compatible with industrial-grade applications and operates reliably in harsh environments.
8. What is the maximum erase cycle endurance of the MT29F1G08ABADAWP-E:D NAND flash memory?
The MT29F1G08ABADAWP-E:D NAND flash memory has a maximum erase cycle endurance of 100,000 cycles.
9. Can the MT29F1G08ABADAWP-E:D NAND flash memory be used in automotive electronics?
Yes, the MT29F1G08ABADAWP-E:D NAND flash memory is suitable for use in automotive electronics and complies with automotive quality standards.
10. What are the available package options for the MT29F1G08ABADAWP-E:D NAND flash memory?
The MT29F1G08ABADAWP-E:D NAND flash memory is available in a 48-ball TSOP and 63-ball BGA package options.
The maximum operating frequency of the MT29F1G08ABADAWP-E:D NAND flash memory is 50MHz.
2. What is the typical power consumption of the MT29F1G08ABADAWP-E:D NAND flash memory during read operations?
The typical power consumption of the MT29F1G08ABADAWP-E:D NAND flash memory during read operations is 25mA.
3. Can the MT29F1G08ABADAWP-E:D NAND flash memory withstand high temperatures?
Yes, the MT29F1G08ABADAWP-E:D NAND flash memory is designed to withstand high temperatures up to 85°C.
4. What is the data retention period of the MT29F1G08ABADAWP-E:D NAND flash memory?
The data retention period of the MT29F1G08ABADAWP-E:D NAND flash memory is 10 years.
5. Does the MT29F1G08ABADAWP-E:D NAND flash memory support hardware data protection features?
Yes, the MT29F1G08ABADAWP-E:D NAND flash memory supports hardware data protection features such as ECC (Error Correction Code).
6. What is the interface voltage range supported by the MT29F1G08ABADAWP-E:D NAND flash memory?
The interface voltage range supported by the MT29F1G08ABADAWP-E:D NAND flash memory is 1.7V to 1.95V.
7. Is the MT29F1G08ABADAWP-E:D NAND flash memory compatible with industrial-grade applications?
Yes, the MT29F1G08ABADAWP-E:D NAND flash memory is compatible with industrial-grade applications and operates reliably in harsh environments.
8. What is the maximum erase cycle endurance of the MT29F1G08ABADAWP-E:D NAND flash memory?
The MT29F1G08ABADAWP-E:D NAND flash memory has a maximum erase cycle endurance of 100,000 cycles.
9. Can the MT29F1G08ABADAWP-E:D NAND flash memory be used in automotive electronics?
Yes, the MT29F1G08ABADAWP-E:D NAND flash memory is suitable for use in automotive electronics and complies with automotive quality standards.
10. What are the available package options for the MT29F1G08ABADAWP-E:D NAND flash memory?
The MT29F1G08ABADAWP-E:D NAND flash memory is available in a 48-ball TSOP and 63-ball BGA package options.
MT29F1G08ABADAWP-E:D Связанные ключевые слова
:
MT29F1G08ABADAWP-E:D Цена
MT29F1G08ABADAWP-E:D Картина
MT29F1G08ABADAWP-E:D Напряжение на выводе
Акции: Быстрая проверка котировок
Минимальный заказ: 1
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