MT29F1G08ABAEAH4-IT:E TR Micron Technology Inc. IC FLASH 1GBIT 20NS 63VFBGA
Интегральные схемы (ИС) 63-VFBGA
Номер производителя:
MT29F1G08ABAEAH4-IT:E TR
Производитель:
Категория продукции:
Описание:
IC FLASH 1GBIT 20NS 63VFBGA
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
Access Time :
-
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
1Gb (128M x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
63-VFBGA
Packaging :
Tape & Reel (TR)
Part Status :
Obsolete
Series :
-
Supplier Device Package :
63-VFBGA (9x11)
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
-
в наличии
61,762
Unit Price:
Свяжитесь с нами
Предложение
MT29F1G08ABAEAH4-IT:E TR Конкурентные цены
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MT29F1G08ABAEAH4-IT:E TR Особенности
MT29F1G08ABAEAH4-IT:E TR is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 63-VFBGA, and Tape & Reel (TR) is its most common packaging method, which belongs to the - series, using 63-VFBGA (9x11), 2.7 V ~ 3.6 V is the most suitable voltage.
MT29F1G08ABAEAH4-IT:E TR Подробная информация о продукции
:
MT29F1G08ABAEAH4-IT:E TR — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MT29F1G08ABAEAH4-IT:E TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F1G08ABAEAH4-IT:E TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F1G08ABAEAH4-IT:E TR (PDF), цена MT29F1G08ABAEAH4-IT:E TR, Распиновка MT29F1G08ABAEAH4-IT:E TR, руководство MT29F1G08ABAEAH4-IT:E TR и решение на замену MT29F1G08ABAEAH4-IT:E TR.
MT29F1G08ABAEAH4-IT:E TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F1G08ABAEAH4-IT:E TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F1G08ABAEAH4-IT:E TR (PDF), цена MT29F1G08ABAEAH4-IT:E TR, Распиновка MT29F1G08ABAEAH4-IT:E TR, руководство MT29F1G08ABAEAH4-IT:E TR и решение на замену MT29F1G08ABAEAH4-IT:E TR.
MT29F1G08ABAEAH4-IT:E TR FAQ
:
1. What is the maximum operating temperature for the MT29F1G08ABAEAH4-IT:E TR NAND flash memory?
The maximum operating temperature for the MT29F1G08ABAEAH4-IT:E TR NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F1G08ABAEAH4-IT:E TR NAND flash memory during read operations?
The typical power consumption of the MT29F1G08ABAEAH4-IT:E TR NAND flash memory during read operations is 25mA.
3. Can the MT29F1G08ABAEAH4-IT:E TR NAND flash memory be operated with a voltage lower than 3.3V?
No, the MT29F1G08ABAEAH4-IT:E TR NAND flash memory requires a minimum voltage of 3.3V for operation.
4. What is the maximum clock frequency supported by the MT29F1G08ABAEAH4-IT:E TR NAND flash memory?
The maximum clock frequency supported by the MT29F1G08ABAEAH4-IT:E TR NAND flash memory is 50MHz.
5. Does the MT29F1G08ABAEAH4-IT:E TR NAND flash memory support hardware data protection features?
Yes, the MT29F1G08ABAEAH4-IT:E TR NAND flash memory supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What is the typical program/erase cycle endurance of the MT29F1G08ABAEAH4-IT:E TR NAND flash memory?
The typical program/erase cycle endurance of the MT29F1G08ABAEAH4-IT:E TR NAND flash memory is 10,000 cycles.
7. Is the MT29F1G08ABAEAH4-IT:E TR NAND flash memory compatible with standard NAND flash interfaces?
Yes, the MT29F1G08ABAEAH4-IT:E TR NAND flash memory is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface).
8. What are the available package options for the MT29F1G08ABAEAH4-IT:E TR NAND flash memory?
The MT29F1G08ABAEAH4-IT:E TR NAND flash memory is available in a 48-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package.
9. Can the MT29F1G08ABAEAH4-IT:E TR NAND flash memory operate in industrial temperature ranges?
Yes, the MT29F1G08ABAEAH4-IT:E TR NAND flash memory is designed to operate in industrial temperature ranges from -40°C to 85°C.
10. Does the MT29F1G08ABAEAH4-IT:E TR NAND flash memory support internal ECC (Error Correction Code) functionality?
Yes, the MT29F1G08ABAEAH4-IT:E TR NAND flash memory supports internal ECC functionality for data reliability and integrity.
The maximum operating temperature for the MT29F1G08ABAEAH4-IT:E TR NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F1G08ABAEAH4-IT:E TR NAND flash memory during read operations?
The typical power consumption of the MT29F1G08ABAEAH4-IT:E TR NAND flash memory during read operations is 25mA.
3. Can the MT29F1G08ABAEAH4-IT:E TR NAND flash memory be operated with a voltage lower than 3.3V?
No, the MT29F1G08ABAEAH4-IT:E TR NAND flash memory requires a minimum voltage of 3.3V for operation.
4. What is the maximum clock frequency supported by the MT29F1G08ABAEAH4-IT:E TR NAND flash memory?
The maximum clock frequency supported by the MT29F1G08ABAEAH4-IT:E TR NAND flash memory is 50MHz.
5. Does the MT29F1G08ABAEAH4-IT:E TR NAND flash memory support hardware data protection features?
Yes, the MT29F1G08ABAEAH4-IT:E TR NAND flash memory supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What is the typical program/erase cycle endurance of the MT29F1G08ABAEAH4-IT:E TR NAND flash memory?
The typical program/erase cycle endurance of the MT29F1G08ABAEAH4-IT:E TR NAND flash memory is 10,000 cycles.
7. Is the MT29F1G08ABAEAH4-IT:E TR NAND flash memory compatible with standard NAND flash interfaces?
Yes, the MT29F1G08ABAEAH4-IT:E TR NAND flash memory is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface).
8. What are the available package options for the MT29F1G08ABAEAH4-IT:E TR NAND flash memory?
The MT29F1G08ABAEAH4-IT:E TR NAND flash memory is available in a 48-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package.
9. Can the MT29F1G08ABAEAH4-IT:E TR NAND flash memory operate in industrial temperature ranges?
Yes, the MT29F1G08ABAEAH4-IT:E TR NAND flash memory is designed to operate in industrial temperature ranges from -40°C to 85°C.
10. Does the MT29F1G08ABAEAH4-IT:E TR NAND flash memory support internal ECC (Error Correction Code) functionality?
Yes, the MT29F1G08ABAEAH4-IT:E TR NAND flash memory supports internal ECC functionality for data reliability and integrity.
MT29F1G08ABAEAH4-IT:E TR Связанные ключевые слова
:
MT29F1G08ABAEAH4-IT:E TR Цена
MT29F1G08ABAEAH4-IT:E TR Картина
MT29F1G08ABAEAH4-IT:E TR Напряжение на выводе
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