MT29F1G08ABAEAH4:E Micron Technology Inc. IC FLASH 1GBIT 20NS 63VFBGA
Интегральные схемы (ИС) 63-VFBGA
Номер производителя:
MT29F1G08ABAEAH4:E
Производитель:
Категория продукции:
Описание:
IC FLASH 1GBIT 20NS 63VFBGA
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
Access Time :
-
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
1Gb (128M x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
0°C ~ 70°C (TA)
Package / Case :
63-VFBGA
Packaging :
Bulk
Part Status :
Active
Series :
-
Supplier Device Package :
63-VFBGA (9x11)
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
-
в наличии
25,440
Unit Price:
Свяжитесь с нами
Предложение
MT29F1G08ABAEAH4:E Конкурентные цены
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MT29F1G08ABAEAH4:E Особенности
MT29F1G08ABAEAH4:E is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is 0°C ~ 70°C (TA), the size is 63-VFBGA, and Bulk is its most common packaging method, which belongs to the - series, using 63-VFBGA (9x11), 2.7 V ~ 3.6 V is the most suitable voltage.
MT29F1G08ABAEAH4:E Подробная информация о продукции
:
MT29F1G08ABAEAH4:E — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MT29F1G08ABAEAH4:E производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F1G08ABAEAH4:E компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F1G08ABAEAH4:E (PDF), цена MT29F1G08ABAEAH4:E, Распиновка MT29F1G08ABAEAH4:E, руководство MT29F1G08ABAEAH4:E и решение на замену MT29F1G08ABAEAH4:E.
MT29F1G08ABAEAH4:E производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F1G08ABAEAH4:E компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F1G08ABAEAH4:E (PDF), цена MT29F1G08ABAEAH4:E, Распиновка MT29F1G08ABAEAH4:E, руководство MT29F1G08ABAEAH4:E и решение на замену MT29F1G08ABAEAH4:E.
MT29F1G08ABAEAH4:E FAQ
:
1. What is the maximum operating temperature for the MT29F1G08ABAEAH4:E NAND flash memory?
The maximum operating temperature for the MT29F1G08ABAEAH4:E NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F1G08ABAEAH4:E during read and program operations?
The typical power consumption of the MT29F1G08ABAEAH4:E during read operations is 25 mA, and during program operations, it is 30 mA.
3. Can the MT29F1G08ABAEAH4:E NAND flash memory be operated at voltages lower than the specified 3.3V?
No, the MT29F1G08ABAEAH4:E NAND flash memory should be operated within the specified voltage range of 2.7V to 3.6V.
4. What is the maximum clock frequency supported by the MT29F1G08ABAEAH4:E for data transfer?
The maximum clock frequency supported by the MT29F1G08ABAEAH4:E for data transfer is 50 MHz.
5. Does the MT29F1G08ABAEAH4:E support hardware data protection features such as block lock and OTP (one-time programmable) areas?
Yes, the MT29F1G08ABAEAH4:E supports hardware data protection features including block lock and OTP areas.
6. What are the available package options for the MT29F1G08ABAEAH4:E NAND flash memory?
The MT29F1G08ABAEAH4:E is available in a 48-ball TSOP, 63-ball BGA, and 100-ball BGA package options.
7. Is the MT29F1G08ABAEAH4:E NAND flash memory compatible with standard NAND controllers?
Yes, the MT29F1G08ABAEAH4:E NAND flash memory is compatible with standard NAND controllers.
8. What is the typical data retention period for the MT29F1G08ABAEAH4:E under specified conditions?
The typical data retention period for the MT29F1G08ABAEAH4:E is 10 years under specified conditions.
9. Can the MT29F1G08ABAEAH4:E NAND flash memory support multiple plane operations?
Yes, the MT29F1G08ABAEAH4:E NAND flash memory supports multiple plane operations.
10. Are there any known reliability issues or failure modes associated with the MT29F1G08ABAEAH4:E NAND flash memory?
No known reliability issues or failure modes have been reported for the MT29F1G08ABAEAH4:E NAND flash memory.
The maximum operating temperature for the MT29F1G08ABAEAH4:E NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F1G08ABAEAH4:E during read and program operations?
The typical power consumption of the MT29F1G08ABAEAH4:E during read operations is 25 mA, and during program operations, it is 30 mA.
3. Can the MT29F1G08ABAEAH4:E NAND flash memory be operated at voltages lower than the specified 3.3V?
No, the MT29F1G08ABAEAH4:E NAND flash memory should be operated within the specified voltage range of 2.7V to 3.6V.
4. What is the maximum clock frequency supported by the MT29F1G08ABAEAH4:E for data transfer?
The maximum clock frequency supported by the MT29F1G08ABAEAH4:E for data transfer is 50 MHz.
5. Does the MT29F1G08ABAEAH4:E support hardware data protection features such as block lock and OTP (one-time programmable) areas?
Yes, the MT29F1G08ABAEAH4:E supports hardware data protection features including block lock and OTP areas.
6. What are the available package options for the MT29F1G08ABAEAH4:E NAND flash memory?
The MT29F1G08ABAEAH4:E is available in a 48-ball TSOP, 63-ball BGA, and 100-ball BGA package options.
7. Is the MT29F1G08ABAEAH4:E NAND flash memory compatible with standard NAND controllers?
Yes, the MT29F1G08ABAEAH4:E NAND flash memory is compatible with standard NAND controllers.
8. What is the typical data retention period for the MT29F1G08ABAEAH4:E under specified conditions?
The typical data retention period for the MT29F1G08ABAEAH4:E is 10 years under specified conditions.
9. Can the MT29F1G08ABAEAH4:E NAND flash memory support multiple plane operations?
Yes, the MT29F1G08ABAEAH4:E NAND flash memory supports multiple plane operations.
10. Are there any known reliability issues or failure modes associated with the MT29F1G08ABAEAH4:E NAND flash memory?
No known reliability issues or failure modes have been reported for the MT29F1G08ABAEAH4:E NAND flash memory.
MT29F1G08ABAEAH4:E Связанные ключевые слова
:
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MT29F1G08ABAEAH4:E Картина
MT29F1G08ABAEAH4:E Напряжение на выводе
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