MT29F2G08ABAEAWP-ATX:E Micron Technology Inc. IC FLASH 2GBIT 48TSOP
Интегральные схемы (ИС) -
Номер производителя:
MT29F2G08ABAEAWP-ATX:E
Производитель:
Категория продукции:
Описание:
IC FLASH 2GBIT 48TSOP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
Access Time :
-
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
2Gb (256M x 8)
Memory Type :
Non-Volatile
Mounting Type :
-
Operating Temperature :
0°C ~ 70°C (TA)
Package / Case :
-
Packaging :
-
Part Status :
Obsolete
Series :
-
Supplier Device Package :
-
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
-
в наличии
58,352
Unit Price:
Свяжитесь с нами
Предложение
MT29F2G08ABAEAWP-ATX:E Конкурентные цены
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MT29F2G08ABAEAWP-ATX:E Особенности
MT29F2G08ABAEAWP-ATX:E is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is 0°C ~ 70°C (TA), the size is -, and - is its most common packaging method, which belongs to the - series, using -, 2.7 V ~ 3.6 V is the most suitable voltage.
MT29F2G08ABAEAWP-ATX:E Подробная информация о продукции
:
MT29F2G08ABAEAWP-ATX:E — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MT29F2G08ABAEAWP-ATX:E производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F2G08ABAEAWP-ATX:E компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F2G08ABAEAWP-ATX:E (PDF), цена MT29F2G08ABAEAWP-ATX:E, Распиновка MT29F2G08ABAEAWP-ATX:E, руководство MT29F2G08ABAEAWP-ATX:E и решение на замену MT29F2G08ABAEAWP-ATX:E.
MT29F2G08ABAEAWP-ATX:E производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F2G08ABAEAWP-ATX:E компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F2G08ABAEAWP-ATX:E (PDF), цена MT29F2G08ABAEAWP-ATX:E, Распиновка MT29F2G08ABAEAWP-ATX:E, руководство MT29F2G08ABAEAWP-ATX:E и решение на замену MT29F2G08ABAEAWP-ATX:E.
MT29F2G08ABAEAWP-ATX:E FAQ
:
1. What is the maximum capacity of the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The MT29F2G08ABAEAWP-ATX:E NAND flash memory has a maximum capacity of 2 gigabits.
2. What interface does the MT29F2G08ABAEAWP-ATX:E NAND flash memory use for data transfer?
The MT29F2G08ABAEAWP-ATX:E NAND flash memory uses a standard 8-bit or 16-bit multiplexed data bus for data transfer.
3. Can the MT29F2G08ABAEAWP-ATX:E NAND flash memory operate at industrial temperature ranges?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is designed to operate reliably within industrial temperature ranges.
4. What are the typical erase and program times for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The typical erase time for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 2 milliseconds, while the typical program time is 200 microseconds.
5. Does the MT29F2G08ABAEAWP-ATX:E NAND flash memory support hardware data protection features?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory supports hardware data protection features such as program/erase lockout and secure OTP (One-Time Programmable) area.
6. What is the voltage range for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The voltage range for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 2.7V to 3.6V for read and program operations, and 0V to 3.6V for erase operations.
7. Can the MT29F2G08ABAEAWP-ATX:E NAND flash memory be used in automotive applications?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is qualified for automotive applications and meets AEC-Q100 requirements.
8. What is the typical data retention period for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The typical data retention period for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 10 years.
9. Does the MT29F2G08ABAEAWP-ATX:E NAND flash memory support multiple block erase operations?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory supports multiple block erase operations, which can improve overall system performance.
10. Is the MT29F2G08ABAEAWP-ATX:E NAND flash memory compatible with standard NAND flash controllers?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is designed to be compatible with standard NAND flash controllers, providing ease of integration into existing systems.
The MT29F2G08ABAEAWP-ATX:E NAND flash memory has a maximum capacity of 2 gigabits.
2. What interface does the MT29F2G08ABAEAWP-ATX:E NAND flash memory use for data transfer?
The MT29F2G08ABAEAWP-ATX:E NAND flash memory uses a standard 8-bit or 16-bit multiplexed data bus for data transfer.
3. Can the MT29F2G08ABAEAWP-ATX:E NAND flash memory operate at industrial temperature ranges?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is designed to operate reliably within industrial temperature ranges.
4. What are the typical erase and program times for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The typical erase time for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 2 milliseconds, while the typical program time is 200 microseconds.
5. Does the MT29F2G08ABAEAWP-ATX:E NAND flash memory support hardware data protection features?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory supports hardware data protection features such as program/erase lockout and secure OTP (One-Time Programmable) area.
6. What is the voltage range for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The voltage range for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 2.7V to 3.6V for read and program operations, and 0V to 3.6V for erase operations.
7. Can the MT29F2G08ABAEAWP-ATX:E NAND flash memory be used in automotive applications?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is qualified for automotive applications and meets AEC-Q100 requirements.
8. What is the typical data retention period for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The typical data retention period for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 10 years.
9. Does the MT29F2G08ABAEAWP-ATX:E NAND flash memory support multiple block erase operations?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory supports multiple block erase operations, which can improve overall system performance.
10. Is the MT29F2G08ABAEAWP-ATX:E NAND flash memory compatible with standard NAND flash controllers?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is designed to be compatible with standard NAND flash controllers, providing ease of integration into existing systems.
MT29F2G08ABAEAWP-ATX:E Связанные ключевые слова
:
MT29F2G08ABAEAWP-ATX:E Цена
MT29F2G08ABAEAWP-ATX:E Картина
MT29F2G08ABAEAWP-ATX:E Напряжение на выводе
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