MT29F4G08BABWP-ET TR Micron Technology Inc. IC FLASH 4GBIT 48TSOP
Интегральные схемы (ИС) 48-TFSOP (0.724", 18.40mm Width)
Номер производителя:
MT29F4G08BABWP-ET TR
Производитель:
Категория продукции:
Описание:
IC FLASH 4GBIT 48TSOP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
MT29F4G08BABWP-ET TR Таблицы данных(PDF)
Access Time :
-
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
4Gb (512M x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
48-TFSOP (0.724", 18.40mm Width)
Packaging :
Tape & Reel (TR)
Part Status :
Discontinued at Digi-Key
Series :
-
Supplier Device Package :
48-TSOP I
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
-
в наличии
35,499
Unit Price:
Свяжитесь с нами
Предложение
MT29F4G08BABWP-ET TR Конкурентные цены
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MT29F4G08BABWP-ET TR Особенности
MT29F4G08BABWP-ET TR is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 48-TFSOP (0.724", 18.40mm Width), and Tape & Reel (TR) is its most common packaging method, which belongs to the - series, using 48-TSOP I, 2.7 V ~ 3.6 V is the most suitable voltage.
MT29F4G08BABWP-ET TR Подробная информация о продукции
:
MT29F4G08BABWP-ET TR — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MT29F4G08BABWP-ET TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F4G08BABWP-ET TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F4G08BABWP-ET TR (PDF), цена MT29F4G08BABWP-ET TR, Распиновка MT29F4G08BABWP-ET TR, руководство MT29F4G08BABWP-ET TR и решение на замену MT29F4G08BABWP-ET TR.
MT29F4G08BABWP-ET TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F4G08BABWP-ET TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F4G08BABWP-ET TR (PDF), цена MT29F4G08BABWP-ET TR, Распиновка MT29F4G08BABWP-ET TR, руководство MT29F4G08BABWP-ET TR и решение на замену MT29F4G08BABWP-ET TR.
MT29F4G08BABWP-ET TR FAQ
:
1. What is the maximum operating temperature for the MT29F4G08BABWP-ET TR NAND flash memory?
The maximum operating temperature for the MT29F4G08BABWP-ET TR NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F4G08BABWP-ET TR NAND flash memory during read operations?
The typical power consumption of the MT29F4G08BABWP-ET TR NAND flash memory during read operations is 50mA.
3. Can the MT29F4G08BABWP-ET TR NAND flash memory be operated at voltages lower than 3.3V?
No, the MT29F4G08BABWP-ET TR NAND flash memory should not be operated at voltages lower than 3.3V to ensure proper functionality and reliability.
4. What is the maximum clock frequency supported by the MT29F4G08BABWP-ET TR NAND flash memory?
The maximum clock frequency supported by the MT29F4G08BABWP-ET TR NAND flash memory is 50MHz.
5. Is the MT29F4G08BABWP-ET TR NAND flash memory compatible with industrial temperature ranges?
Yes, the MT29F4G08BABWP-ET TR NAND flash memory is designed to operate within industrial temperature ranges, making it suitable for industrial applications.
6. What is the typical program/erase cycle endurance of the MT29F4G08BABWP-ET TR NAND flash memory?
The typical program/erase cycle endurance of the MT29F4G08BABWP-ET TR NAND flash memory is 10,000 cycles.
7. Does the MT29F4G08BABWP-ET TR NAND flash memory support hardware data protection features?
Yes, the MT29F4G08BABWP-ET TR NAND flash memory supports hardware data protection features to ensure data integrity and security.
8. What are the available package options for the MT29F4G08BABWP-ET TR NAND flash memory?
The MT29F4G08BABWP-ET TR NAND flash memory is available in a 48-ball WFBGA package.
9. Can the MT29F4G08BABWP-ET TR NAND flash memory be used in automotive applications?
Yes, the MT29F4G08BABWP-ET TR NAND flash memory is suitable for use in automotive applications, meeting the required specifications and standards.
10. What is the typical data retention period of the MT29F4G08BABWP-ET TR NAND flash memory?
The typical data retention period of the MT29F4G08BABWP-ET TR NAND flash memory is 10 years.
The maximum operating temperature for the MT29F4G08BABWP-ET TR NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F4G08BABWP-ET TR NAND flash memory during read operations?
The typical power consumption of the MT29F4G08BABWP-ET TR NAND flash memory during read operations is 50mA.
3. Can the MT29F4G08BABWP-ET TR NAND flash memory be operated at voltages lower than 3.3V?
No, the MT29F4G08BABWP-ET TR NAND flash memory should not be operated at voltages lower than 3.3V to ensure proper functionality and reliability.
4. What is the maximum clock frequency supported by the MT29F4G08BABWP-ET TR NAND flash memory?
The maximum clock frequency supported by the MT29F4G08BABWP-ET TR NAND flash memory is 50MHz.
5. Is the MT29F4G08BABWP-ET TR NAND flash memory compatible with industrial temperature ranges?
Yes, the MT29F4G08BABWP-ET TR NAND flash memory is designed to operate within industrial temperature ranges, making it suitable for industrial applications.
6. What is the typical program/erase cycle endurance of the MT29F4G08BABWP-ET TR NAND flash memory?
The typical program/erase cycle endurance of the MT29F4G08BABWP-ET TR NAND flash memory is 10,000 cycles.
7. Does the MT29F4G08BABWP-ET TR NAND flash memory support hardware data protection features?
Yes, the MT29F4G08BABWP-ET TR NAND flash memory supports hardware data protection features to ensure data integrity and security.
8. What are the available package options for the MT29F4G08BABWP-ET TR NAND flash memory?
The MT29F4G08BABWP-ET TR NAND flash memory is available in a 48-ball WFBGA package.
9. Can the MT29F4G08BABWP-ET TR NAND flash memory be used in automotive applications?
Yes, the MT29F4G08BABWP-ET TR NAND flash memory is suitable for use in automotive applications, meeting the required specifications and standards.
10. What is the typical data retention period of the MT29F4G08BABWP-ET TR NAND flash memory?
The typical data retention period of the MT29F4G08BABWP-ET TR NAND flash memory is 10 years.
MT29F4G08BABWP-ET TR Связанные ключевые слова
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MT29F4G08BABWP-ET TR Цена
MT29F4G08BABWP-ET TR Картина
MT29F4G08BABWP-ET TR Напряжение на выводе
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