MT29F4G08BABWP TR Micron Technology Inc. IC FLASH 4GBIT 48TSOP
Интегральные схемы (ИС) 48-TFSOP (0.724", 18.40mm Width)
Номер производителя:
MT29F4G08BABWP TR
Производитель:
Категория продукции:
Описание:
IC FLASH 4GBIT 48TSOP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
MT29F4G08BABWP TR Таблицы данных(PDF)
Access Time :
-
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
4Gb (512M x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
0°C ~ 70°C (TA)
Package / Case :
48-TFSOP (0.724", 18.40mm Width)
Packaging :
Tape & Reel (TR)
Part Status :
Obsolete
Series :
-
Supplier Device Package :
48-TSOP I
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
-
в наличии
19,005
Unit Price:
Свяжитесь с нами
Предложение
MT29F4G08BABWP TR Конкурентные цены
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MT29F4G08BABWP TR Особенности
MT29F4G08BABWP TR is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is 0°C ~ 70°C (TA), the size is 48-TFSOP (0.724", 18.40mm Width), and Tape & Reel (TR) is its most common packaging method, which belongs to the - series, using 48-TSOP I, 2.7 V ~ 3.6 V is the most suitable voltage.
MT29F4G08BABWP TR Подробная информация о продукции
:
MT29F4G08BABWP TR — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MT29F4G08BABWP TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F4G08BABWP TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F4G08BABWP TR (PDF), цена MT29F4G08BABWP TR, Распиновка MT29F4G08BABWP TR, руководство MT29F4G08BABWP TR и решение на замену MT29F4G08BABWP TR.
MT29F4G08BABWP TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F4G08BABWP TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F4G08BABWP TR (PDF), цена MT29F4G08BABWP TR, Распиновка MT29F4G08BABWP TR, руководство MT29F4G08BABWP TR и решение на замену MT29F4G08BABWP TR.
MT29F4G08BABWP TR FAQ
:
1. What is the maximum operating temperature of the MT29F4G08BABWP TR NAND flash memory?
The maximum operating temperature of the MT29F4G08BABWP TR NAND flash memory is 85°C.
2. What is the typical input voltage range for this NAND flash memory?
The typical input voltage range for the MT29F4G08BABWP TR NAND flash memory is 2.7V to 3.6V.
3. Can the MT29F4G08BABWP TR operate at different clock frequencies?
Yes, the MT29F4G08BABWP TR can operate at different clock frequencies ranging from 25MHz to 50MHz.
4. What is the erase cycle endurance of the MT29F4G08BABWP TR NAND flash memory?
The erase cycle endurance of the MT29F4G08BABWP TR NAND flash memory is specified to be 100,000 cycles.
5. Does the MT29F4G08BABWP TR support hardware data protection features?
Yes, the MT29F4G08BABWP TR supports hardware data protection features such as Program/Erase Lockout and Secure OTP.
6. What are the available package options for the MT29F4G08BABWP TR?
The MT29F4G08BABWP TR is available in a 48-ball WFBGA package.
7. Is the MT29F4G08BABWP TR compatible with industrial operating conditions?
Yes, the MT29F4G08BABWP TR is designed to be compatible with industrial operating conditions.
8. What is the typical power consumption of the MT29F4G08BABWP TR during read operations?
The typical power consumption of the MT29F4G08BABWP TR during read operations is 25mA.
9. Can the MT29F4G08BABWP TR support multiple plane operations?
Yes, the MT29F4G08BABWP TR supports multiple plane operations for improved performance.
10. What is the data retention period of the MT29F4G08BABWP TR NAND flash memory?
The data retention period of the MT29F4G08BABWP TR NAND flash memory is specified to be 10 years.
The maximum operating temperature of the MT29F4G08BABWP TR NAND flash memory is 85°C.
2. What is the typical input voltage range for this NAND flash memory?
The typical input voltage range for the MT29F4G08BABWP TR NAND flash memory is 2.7V to 3.6V.
3. Can the MT29F4G08BABWP TR operate at different clock frequencies?
Yes, the MT29F4G08BABWP TR can operate at different clock frequencies ranging from 25MHz to 50MHz.
4. What is the erase cycle endurance of the MT29F4G08BABWP TR NAND flash memory?
The erase cycle endurance of the MT29F4G08BABWP TR NAND flash memory is specified to be 100,000 cycles.
5. Does the MT29F4G08BABWP TR support hardware data protection features?
Yes, the MT29F4G08BABWP TR supports hardware data protection features such as Program/Erase Lockout and Secure OTP.
6. What are the available package options for the MT29F4G08BABWP TR?
The MT29F4G08BABWP TR is available in a 48-ball WFBGA package.
7. Is the MT29F4G08BABWP TR compatible with industrial operating conditions?
Yes, the MT29F4G08BABWP TR is designed to be compatible with industrial operating conditions.
8. What is the typical power consumption of the MT29F4G08BABWP TR during read operations?
The typical power consumption of the MT29F4G08BABWP TR during read operations is 25mA.
9. Can the MT29F4G08BABWP TR support multiple plane operations?
Yes, the MT29F4G08BABWP TR supports multiple plane operations for improved performance.
10. What is the data retention period of the MT29F4G08BABWP TR NAND flash memory?
The data retention period of the MT29F4G08BABWP TR NAND flash memory is specified to be 10 years.
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Минимальный заказ: 1
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