MT29F64G08AECABH1-10ITZ:A Micron Technology Inc. IC FLASH 64GBIT 100MHZ VBGA
Интегральные схемы (ИС) 100-VBGA
Номер производителя:
MT29F64G08AECABH1-10ITZ:A
Производитель:
Категория продукции:
Описание:
IC FLASH 64GBIT 100MHZ VBGA
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
Access Time :
-
Clock Frequency :
100MHz
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
64Gb (8G x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
100-VBGA
Packaging :
Bulk
Part Status :
Active
Series :
-
Supplier Device Package :
100-VBGA (12x18)
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
-
в наличии
21,877
Unit Price:
Свяжитесь с нами
Предложение
MT29F64G08AECABH1-10ITZ:A Конкурентные цены
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MT29F64G08AECABH1-10ITZ:A Особенности
MT29F64G08AECABH1-10ITZ:A is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 100-VBGA, and Bulk is its most common packaging method, which belongs to the - series, using 100-VBGA (12x18), 2.7 V ~ 3.6 V is the most suitable voltage.
MT29F64G08AECABH1-10ITZ:A Подробная информация о продукции
:
MT29F64G08AECABH1-10ITZ:A — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MT29F64G08AECABH1-10ITZ:A производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F64G08AECABH1-10ITZ:A компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F64G08AECABH1-10ITZ:A (PDF), цена MT29F64G08AECABH1-10ITZ:A, Распиновка MT29F64G08AECABH1-10ITZ:A, руководство MT29F64G08AECABH1-10ITZ:A и решение на замену MT29F64G08AECABH1-10ITZ:A.
MT29F64G08AECABH1-10ITZ:A производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F64G08AECABH1-10ITZ:A компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F64G08AECABH1-10ITZ:A (PDF), цена MT29F64G08AECABH1-10ITZ:A, Распиновка MT29F64G08AECABH1-10ITZ:A, руководство MT29F64G08AECABH1-10ITZ:A и решение на замену MT29F64G08AECABH1-10ITZ:A.
MT29F64G08AECABH1-10ITZ:A FAQ
:
1. What is the maximum capacity of the MT29F64G08AECABH1-10ITZ:A NAND flash memory?
The MT29F64G08AECABH1-10ITZ:A NAND flash memory has a maximum capacity of 64 gigabits.
2. What interface does the MT29F64G08AECABH1-10ITZ:A NAND flash memory use for data transfer?
The MT29F64G08AECABH1-10ITZ:A NAND flash memory uses a standard asynchronous interface for data transfer.
3. Can the MT29F64G08AECABH1-10ITZ:A NAND flash memory operate at industrial temperature ranges?
Yes, the MT29F64G08AECABH1-10ITZ:A NAND flash memory is designed to operate reliably within industrial temperature ranges.
4. What is the typical power consumption of the MT29F64G08AECABH1-10ITZ:A NAND flash memory during read and program operations?
The typical power consumption of the MT29F64G08AECABH1-10ITZ:A NAND flash memory during read and program operations is low, making it suitable for power-sensitive applications.
5. Does the MT29F64G08AECABH1-10ITZ:A NAND flash memory support hardware data protection features?
Yes, the MT29F64G08AECABH1-10ITZ:A NAND flash memory supports hardware data protection features to ensure data integrity and security.
6. What are the recommended voltage levels for the MT29F64G08AECABH1-10ITZ:A NAND flash memory?
The recommended voltage levels for the MT29F64G08AECABH1-10ITZ:A NAND flash memory are in accordance with industry standards and specifications.
7. Is the MT29F64G08AECABH1-10ITZ:A NAND flash memory compatible with various system designs and architectures?
Yes, the MT29F64G08AECABH1-10ITZ:A NAND flash memory is designed to be compatible with a wide range of system designs and architectures.
8. What is the typical erase cycle endurance of the MT29F64G08AECABH1-10ITZ:A NAND flash memory?
The MT29F64G08AECABH1-10ITZ:A NAND flash memory offers high erase cycle endurance, ensuring reliable long-term performance.
9. Can the MT29F64G08AECABH1-10ITZ:A NAND flash memory be used in automotive applications?
Yes, the MT29F64G08AECABH1-10ITZ:A NAND flash memory is suitable for use in automotive applications, meeting the required quality and reliability standards.
10. Does the MT29F64G08AECABH1-10ITZ:A NAND flash memory support advanced error correction techniques?
Yes, the MT29F64G08AECABH1-10ITZ:A NAND flash memory supports advanced error correction techniques to enhance data integrity and reliability.
The MT29F64G08AECABH1-10ITZ:A NAND flash memory has a maximum capacity of 64 gigabits.
2. What interface does the MT29F64G08AECABH1-10ITZ:A NAND flash memory use for data transfer?
The MT29F64G08AECABH1-10ITZ:A NAND flash memory uses a standard asynchronous interface for data transfer.
3. Can the MT29F64G08AECABH1-10ITZ:A NAND flash memory operate at industrial temperature ranges?
Yes, the MT29F64G08AECABH1-10ITZ:A NAND flash memory is designed to operate reliably within industrial temperature ranges.
4. What is the typical power consumption of the MT29F64G08AECABH1-10ITZ:A NAND flash memory during read and program operations?
The typical power consumption of the MT29F64G08AECABH1-10ITZ:A NAND flash memory during read and program operations is low, making it suitable for power-sensitive applications.
5. Does the MT29F64G08AECABH1-10ITZ:A NAND flash memory support hardware data protection features?
Yes, the MT29F64G08AECABH1-10ITZ:A NAND flash memory supports hardware data protection features to ensure data integrity and security.
6. What are the recommended voltage levels for the MT29F64G08AECABH1-10ITZ:A NAND flash memory?
The recommended voltage levels for the MT29F64G08AECABH1-10ITZ:A NAND flash memory are in accordance with industry standards and specifications.
7. Is the MT29F64G08AECABH1-10ITZ:A NAND flash memory compatible with various system designs and architectures?
Yes, the MT29F64G08AECABH1-10ITZ:A NAND flash memory is designed to be compatible with a wide range of system designs and architectures.
8. What is the typical erase cycle endurance of the MT29F64G08AECABH1-10ITZ:A NAND flash memory?
The MT29F64G08AECABH1-10ITZ:A NAND flash memory offers high erase cycle endurance, ensuring reliable long-term performance.
9. Can the MT29F64G08AECABH1-10ITZ:A NAND flash memory be used in automotive applications?
Yes, the MT29F64G08AECABH1-10ITZ:A NAND flash memory is suitable for use in automotive applications, meeting the required quality and reliability standards.
10. Does the MT29F64G08AECABH1-10ITZ:A NAND flash memory support advanced error correction techniques?
Yes, the MT29F64G08AECABH1-10ITZ:A NAND flash memory supports advanced error correction techniques to enhance data integrity and reliability.
MT29F64G08AECABH1-10ITZ:A Связанные ключевые слова
:
MT29F64G08AECABH1-10ITZ:A Цена
MT29F64G08AECABH1-10ITZ:A Картина
MT29F64G08AECABH1-10ITZ:A Напряжение на выводе
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Минимальный заказ: 1
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