MT47H512M4THN-25E:M TR Micron Technology Inc. IC SDRAM 2GBIT 400MHZ 63FBGA
Интегральные схемы (ИС) 63-TFBGA
Номер производителя:
MT47H512M4THN-25E:M TR
Производитель:
Категория продукции:
Описание:
IC SDRAM 2GBIT 400MHZ 63FBGA
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
MT47H512M4THN-25E:M TR Таблицы данных(PDF)
Access Time :
400ps
Clock Frequency :
400MHz
Memory Format :
DRAM
Memory Interface :
Parallel
Memory Size :
2Gb (512M x 4)
Memory Type :
Volatile
Mounting Type :
Surface Mount
Operating Temperature :
0°C ~ 85°C (TC)
Package / Case :
63-TFBGA
Packaging :
Tape & Reel (TR)
Part Status :
Obsolete
Series :
-
Supplier Device Package :
63-FBGA (8x10)
Technology :
SDRAM - DDR2
Voltage - Supply :
1.7 V ~ 1.9 V
Write Cycle Time - Word, Page :
15ns
в наличии
51,365
Unit Price:
Свяжитесь с нами
Предложение
MT47H512M4THN-25E:M TR Конкурентные цены
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MT47H512M4THN-25E:M TR Особенности
MT47H512M4THN-25E:M TR is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is 0°C ~ 85°C (TC), the size is 63-TFBGA, and Tape & Reel (TR) is its most common packaging method, which belongs to the - series, using 63-FBGA (8x10), 1.7 V ~ 1.9 V is the most suitable voltage.
MT47H512M4THN-25E:M TR Подробная информация о продукции
:
MT47H512M4THN-25E:M TR — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MT47H512M4THN-25E:M TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT47H512M4THN-25E:M TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT47H512M4THN-25E:M TR (PDF), цена MT47H512M4THN-25E:M TR, Распиновка MT47H512M4THN-25E:M TR, руководство MT47H512M4THN-25E:M TR и решение на замену MT47H512M4THN-25E:M TR.
MT47H512M4THN-25E:M TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT47H512M4THN-25E:M TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT47H512M4THN-25E:M TR (PDF), цена MT47H512M4THN-25E:M TR, Распиновка MT47H512M4THN-25E:M TR, руководство MT47H512M4THN-25E:M TR и решение на замену MT47H512M4THN-25E:M TR.
MT47H512M4THN-25E:M TR FAQ
:
1. What is the maximum operating frequency of the MT47H512M4THN-25E:M TR DDR3 SDRAM?
The maximum operating frequency of the MT47H512M4THN-25E:M TR DDR3 SDRAM is 800 MHz.
2. What is the operating voltage range for the MT47H512M4THN-25E:M TR DDR3 SDRAM?
The operating voltage range for the MT47H512M4THN-25E:M TR DDR3 SDRAM is 1.35V to 1.5V.
3. Can the MT47H512M4THN-25E:M TR DDR3 SDRAM operate at extended temperatures?
Yes, the MT47H512M4THN-25E:M TR DDR3 SDRAM is designed to operate at extended temperatures ranging from -40°C to 95°C.
4. What is the maximum capacity supported by the MT47H512M4THN-25E:M TR DDR3 SDRAM?
The maximum capacity supported by the MT47H512M4THN-25E:M TR DDR3 SDRAM is 4Gb.
5. Does the MT47H512M4THN-25E:M TR DDR3 SDRAM support auto-refresh and self-refresh modes?
Yes, the MT47H512M4THN-25E:M TR DDR3 SDRAM supports both auto-refresh and self-refresh modes.
6. What are the available package options for the MT47H512M4THN-25E:M TR DDR3 SDRAM?
The MT47H512M4THN-25E:M TR DDR3 SDRAM is available in a 96-ball FBGA package.
7. Is the MT47H512M4THN-25E:M TR DDR3 SDRAM RoHS compliant?
Yes, the MT47H512M4THN-25E:M TR DDR3 SDRAM is RoHS compliant.
8. What is the CAS latency of the MT47H512M4THN-25E:M TR DDR3 SDRAM?
The CAS latency of the MT47H512M4THN-25E:M TR DDR3 SDRAM is CL11.
9. Can the MT47H512M4THN-25E:M TR DDR3 SDRAM be used in automotive applications?
Yes, the MT47H512M4THN-25E:M TR DDR3 SDRAM is suitable for use in automotive applications.
10. What is the refresh rate of the MT47H512M4THN-25E:M TR DDR3 SDRAM?
The refresh rate of the MT47H512M4THN-25E:M TR DDR3 SDRAM is 64ms (8K cycles).
The maximum operating frequency of the MT47H512M4THN-25E:M TR DDR3 SDRAM is 800 MHz.
2. What is the operating voltage range for the MT47H512M4THN-25E:M TR DDR3 SDRAM?
The operating voltage range for the MT47H512M4THN-25E:M TR DDR3 SDRAM is 1.35V to 1.5V.
3. Can the MT47H512M4THN-25E:M TR DDR3 SDRAM operate at extended temperatures?
Yes, the MT47H512M4THN-25E:M TR DDR3 SDRAM is designed to operate at extended temperatures ranging from -40°C to 95°C.
4. What is the maximum capacity supported by the MT47H512M4THN-25E:M TR DDR3 SDRAM?
The maximum capacity supported by the MT47H512M4THN-25E:M TR DDR3 SDRAM is 4Gb.
5. Does the MT47H512M4THN-25E:M TR DDR3 SDRAM support auto-refresh and self-refresh modes?
Yes, the MT47H512M4THN-25E:M TR DDR3 SDRAM supports both auto-refresh and self-refresh modes.
6. What are the available package options for the MT47H512M4THN-25E:M TR DDR3 SDRAM?
The MT47H512M4THN-25E:M TR DDR3 SDRAM is available in a 96-ball FBGA package.
7. Is the MT47H512M4THN-25E:M TR DDR3 SDRAM RoHS compliant?
Yes, the MT47H512M4THN-25E:M TR DDR3 SDRAM is RoHS compliant.
8. What is the CAS latency of the MT47H512M4THN-25E:M TR DDR3 SDRAM?
The CAS latency of the MT47H512M4THN-25E:M TR DDR3 SDRAM is CL11.
9. Can the MT47H512M4THN-25E:M TR DDR3 SDRAM be used in automotive applications?
Yes, the MT47H512M4THN-25E:M TR DDR3 SDRAM is suitable for use in automotive applications.
10. What is the refresh rate of the MT47H512M4THN-25E:M TR DDR3 SDRAM?
The refresh rate of the MT47H512M4THN-25E:M TR DDR3 SDRAM is 64ms (8K cycles).
MT47H512M4THN-25E:M TR Связанные ключевые слова
:
MT47H512M4THN-25E:M TR Цена
MT47H512M4THN-25E:M TR Картина
MT47H512M4THN-25E:M TR Напряжение на выводе
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