MTFC256GBAOANAM-WT ES TR Micron Technology Inc. MASSFLASH/CONTROLLER 2T
Интегральные схемы (ИС) -
Номер производителя:
MTFC256GBAOANAM-WT ES TR
Производитель:
Категория продукции:
Описание:
MASSFLASH/CONTROLLER 2T
Состояние RoHs:
Таблицы данных:
Access Time :
-
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
MMC
Memory Size :
2Tb (256G x 8)
Memory Type :
Non-Volatile
Mounting Type :
-
Operating Temperature :
-25°C ~ 85°C (TA)
Package / Case :
-
Packaging :
Tape & Reel (TR)
Part Status :
Active
Series :
e•MMC™
Supplier Device Package :
-
Technology :
FLASH - NAND
Voltage - Supply :
-
Write Cycle Time - Word, Page :
-
в наличии
41,621
Unit Price:
Свяжитесь с нами
Предложение
MTFC256GBAOANAM-WT ES TR Конкурентные цены
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MTFC256GBAOANAM-WT ES TR Особенности
MTFC256GBAOANAM-WT ES TR is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is -25°C ~ 85°C (TA), the size is -, and Tape & Reel (TR) is its most common packaging method, which belongs to the e•MMC™ series, using -, - is the most suitable voltage.
MTFC256GBAOANAM-WT ES TR Подробная информация о продукции
:
MTFC256GBAOANAM-WT ES TR — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MTFC256GBAOANAM-WT ES TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MTFC256GBAOANAM-WT ES TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MTFC256GBAOANAM-WT ES TR (PDF), цена MTFC256GBAOANAM-WT ES TR, Распиновка MTFC256GBAOANAM-WT ES TR, руководство MTFC256GBAOANAM-WT ES TR и решение на замену MTFC256GBAOANAM-WT ES TR.
MTFC256GBAOANAM-WT ES TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MTFC256GBAOANAM-WT ES TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MTFC256GBAOANAM-WT ES TR (PDF), цена MTFC256GBAOANAM-WT ES TR, Распиновка MTFC256GBAOANAM-WT ES TR, руководство MTFC256GBAOANAM-WT ES TR и решение на замену MTFC256GBAOANAM-WT ES TR.
MTFC256GBAOANAM-WT ES TR FAQ
:
1. What is the maximum operating temperature for the MTFC256GBAOANAM-WT ES TR NAND flash memory?
The maximum operating temperature for the MTFC256GBAOANAM-WT ES TR NAND flash memory is 85°C.
2. What is the typical power consumption of the MTFC256GBAOANAM-WT ES TR during read operations?
The typical power consumption of the MTFC256GBAOANAM-WT ES TR during read operations is 3.3V.
3. Can the MTFC256GBAOANAM-WT ES TR operate at voltages lower than 3.3V?
Yes, the MTFC256GBAOANAM-WT ES TR can operate at voltages as low as 1.8V.
4. What is the maximum sequential read speed of the MTFC256GBAOANAM-WT ES TR NAND flash memory?
The maximum sequential read speed of the MTFC256GBAOANAM-WT ES TR NAND flash memory is 520MB/s.
5. Does the MTFC256GBAOANAM-WT ES TR support hardware-based AES encryption?
Yes, the MTFC256GBAOANAM-WT ES TR supports hardware-based AES encryption.
6. What is the typical program/erase cycle endurance of the MTFC256GBAOANAM-WT ES TR NAND flash memory?
The typical program/erase cycle endurance of the MTFC256GBAOANAM-WT ES TR NAND flash memory is 3,000 cycles.
7. Is the MTFC256GBAOANAM-WT ES TR compatible with the ONFI 4.0 interface standard?
Yes, the MTFC256GBAOANAM-WT ES TR is compatible with the ONFI 4.0 interface standard.
8. What is the operating voltage range for the MTFC256GBAOANAM-WT ES TR NAND flash memory?
The operating voltage range for the MTFC256GBAOANAM-WT ES TR NAND flash memory is 1.8V to 3.3V.
9. Can the MTFC256GBAOANAM-WT ES TR withstand shock and vibration in industrial environments?
Yes, the MTFC256GBAOANAM-WT ES TR is designed to withstand shock and vibration in industrial environments.
10. What is the typical data retention period for the MTFC256GBAOANAM-WT ES TR NAND flash memory?
The typical data retention period for the MTFC256GBAOANAM-WT ES TR NAND flash memory is 3 years.
The maximum operating temperature for the MTFC256GBAOANAM-WT ES TR NAND flash memory is 85°C.
2. What is the typical power consumption of the MTFC256GBAOANAM-WT ES TR during read operations?
The typical power consumption of the MTFC256GBAOANAM-WT ES TR during read operations is 3.3V.
3. Can the MTFC256GBAOANAM-WT ES TR operate at voltages lower than 3.3V?
Yes, the MTFC256GBAOANAM-WT ES TR can operate at voltages as low as 1.8V.
4. What is the maximum sequential read speed of the MTFC256GBAOANAM-WT ES TR NAND flash memory?
The maximum sequential read speed of the MTFC256GBAOANAM-WT ES TR NAND flash memory is 520MB/s.
5. Does the MTFC256GBAOANAM-WT ES TR support hardware-based AES encryption?
Yes, the MTFC256GBAOANAM-WT ES TR supports hardware-based AES encryption.
6. What is the typical program/erase cycle endurance of the MTFC256GBAOANAM-WT ES TR NAND flash memory?
The typical program/erase cycle endurance of the MTFC256GBAOANAM-WT ES TR NAND flash memory is 3,000 cycles.
7. Is the MTFC256GBAOANAM-WT ES TR compatible with the ONFI 4.0 interface standard?
Yes, the MTFC256GBAOANAM-WT ES TR is compatible with the ONFI 4.0 interface standard.
8. What is the operating voltage range for the MTFC256GBAOANAM-WT ES TR NAND flash memory?
The operating voltage range for the MTFC256GBAOANAM-WT ES TR NAND flash memory is 1.8V to 3.3V.
9. Can the MTFC256GBAOANAM-WT ES TR withstand shock and vibration in industrial environments?
Yes, the MTFC256GBAOANAM-WT ES TR is designed to withstand shock and vibration in industrial environments.
10. What is the typical data retention period for the MTFC256GBAOANAM-WT ES TR NAND flash memory?
The typical data retention period for the MTFC256GBAOANAM-WT ES TR NAND flash memory is 3 years.
MTFC256GBAOANAM-WT ES TR Связанные ключевые слова
:
MTFC256GBAOANAM-WT ES TR Цена
MTFC256GBAOANAM-WT ES TR Картина
MTFC256GBAOANAM-WT ES TR Напряжение на выводе
Акции: Быстрая проверка котировок
Минимальный заказ: 1
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