NAND128W3AABN6F TR Micron Technology Inc. IC FLASH 128MBIT 48TSOP
Интегральные схемы (ИС) 48-TFSOP (0.724", 18.40mm Width)
Номер производителя:
NAND128W3AABN6F TR
Производитель:
Категория продукции:
Описание:
IC FLASH 128MBIT 48TSOP
Состояние RoHs:
Таблицы данных:
Access Time :
50ns
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
128Mb (16M x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
48-TFSOP (0.724", 18.40mm Width)
Packaging :
Tape & Reel (TR)
Part Status :
Obsolete
Series :
-
Supplier Device Package :
48-TSOP
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
50ns
в наличии
33,283
Unit Price:
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NAND128W3AABN6F TR Конкурентные цены
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NAND128W3AABN6F TR Особенности
NAND128W3AABN6F TR is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 48-TFSOP (0.724", 18.40mm Width), and Tape & Reel (TR) is its most common packaging method, which belongs to the - series, using 48-TSOP, 2.7 V ~ 3.6 V is the most suitable voltage.
NAND128W3AABN6F TR Подробная информация о продукции
:
NAND128W3AABN6F TR — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
NAND128W3AABN6F TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
NAND128W3AABN6F TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных NAND128W3AABN6F TR (PDF), цена NAND128W3AABN6F TR, Распиновка NAND128W3AABN6F TR, руководство NAND128W3AABN6F TR и решение на замену NAND128W3AABN6F TR.
NAND128W3AABN6F TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
NAND128W3AABN6F TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных NAND128W3AABN6F TR (PDF), цена NAND128W3AABN6F TR, Распиновка NAND128W3AABN6F TR, руководство NAND128W3AABN6F TR и решение на замену NAND128W3AABN6F TR.
NAND128W3AABN6F TR FAQ
:
1. What is the maximum operating temperature for the NAND128W3AABN6F TR?
The maximum operating temperature for the NAND128W3AABN6F TR is 85°C.
2. What is the input voltage range for this semiconductor?
The input voltage range for the NAND128W3AABN6F TR is 2.7V to 3.6V.
3. Can you provide the typical read and write access times for this NAND flash memory?
The typical read access time for the NAND128W3AABN6F TR is 25ns, and the typical write access time is 200µs.
4. What is the capacity of the NAND128W3AABN6F TR in gigabytes?
The capacity of the NAND128W3AABN6F TR is 128 gigabits, which is equivalent to 16 gigabytes.
5. Does this semiconductor support hardware data protection features?
Yes, the NAND128W3AABN6F TR supports hardware data protection features such as ECC (Error Correction Code) and wear leveling.
6. What is the package type and dimensions of the NAND128W3AABN6F TR?
The NAND128W3AABN6F TR comes in a standard 48-pin TSOP (Thin Small Outline Package) with dimensions of 12mm x 20mm.
7. Can you explain the interface protocol used by this NAND flash memory?
The NAND128W3AABN6F TR uses a standard asynchronous NAND interface protocol for data transfer.
8. What are the typical power consumption specifications for this semiconductor?
The typical power consumption for the NAND128W3AABN6F TR is 30mA for read operations and 40mA for write operations.
9. Is the NAND128W3AABN6F TR compatible with industrial temperature ranges?
Yes, the NAND128W3AABN6F TR is designed to operate reliably within industrial temperature ranges of -40°C to 85°C.
10. Can you provide information on the data retention and endurance characteristics of this NAND flash memory?
The NAND128W3AABN6F TR has a typical data retention of 10 years and an endurance of 3,000 program/erase cycles.
The maximum operating temperature for the NAND128W3AABN6F TR is 85°C.
2. What is the input voltage range for this semiconductor?
The input voltage range for the NAND128W3AABN6F TR is 2.7V to 3.6V.
3. Can you provide the typical read and write access times for this NAND flash memory?
The typical read access time for the NAND128W3AABN6F TR is 25ns, and the typical write access time is 200µs.
4. What is the capacity of the NAND128W3AABN6F TR in gigabytes?
The capacity of the NAND128W3AABN6F TR is 128 gigabits, which is equivalent to 16 gigabytes.
5. Does this semiconductor support hardware data protection features?
Yes, the NAND128W3AABN6F TR supports hardware data protection features such as ECC (Error Correction Code) and wear leveling.
6. What is the package type and dimensions of the NAND128W3AABN6F TR?
The NAND128W3AABN6F TR comes in a standard 48-pin TSOP (Thin Small Outline Package) with dimensions of 12mm x 20mm.
7. Can you explain the interface protocol used by this NAND flash memory?
The NAND128W3AABN6F TR uses a standard asynchronous NAND interface protocol for data transfer.
8. What are the typical power consumption specifications for this semiconductor?
The typical power consumption for the NAND128W3AABN6F TR is 30mA for read operations and 40mA for write operations.
9. Is the NAND128W3AABN6F TR compatible with industrial temperature ranges?
Yes, the NAND128W3AABN6F TR is designed to operate reliably within industrial temperature ranges of -40°C to 85°C.
10. Can you provide information on the data retention and endurance characteristics of this NAND flash memory?
The NAND128W3AABN6F TR has a typical data retention of 10 years and an endurance of 3,000 program/erase cycles.
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