TC58NVG1S3HBAI6 Toshiba Memory America, Inc. IC EEPROM 2GBIT 25NS 67VFBGA
Интегральные схемы (ИС) 67-VFBGA
Номер производителя:
TC58NVG1S3HBAI6
Производитель:
Категория продукции:
Описание:
IC EEPROM 2GBIT 25NS 67VFBGA
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
TC58NVG1S3HBAI6 Таблицы данных(PDF)
Access Time :
25ns
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
2Gb (256M x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
67-VFBGA
Packaging :
Tray
Part Status :
Active
Series :
-
Supplier Device Package :
67-VFBGA (6.5x8)
Technology :
FLASH - NAND (SLC)
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
25ns
в наличии
23,761
Unit Price:
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Предложение
TC58NVG1S3HBAI6 Конкурентные цены
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TC58NVG1S3HBAI6 Особенности
TC58NVG1S3HBAI6 is produced by Toshiba Memory America, Inc., belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 67-VFBGA, and Tray is its most common packaging method, which belongs to the - series, using 67-VFBGA (6.5x8), 2.7 V ~ 3.6 V is the most suitable voltage.
TC58NVG1S3HBAI6 Подробная информация о продукции
:
TC58NVG1S3HBAI6 — это объем памяти, буферные усилители, разработанные и
произведенные
Toshiba Memory America, Inc..
TC58NVG1S3HBAI6 производства Toshiba Memory America, Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
TC58NVG1S3HBAI6 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных TC58NVG1S3HBAI6 (PDF), цена TC58NVG1S3HBAI6, Распиновка TC58NVG1S3HBAI6, руководство TC58NVG1S3HBAI6 и решение на замену TC58NVG1S3HBAI6.
TC58NVG1S3HBAI6 производства Toshiba Memory America, Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
TC58NVG1S3HBAI6 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных TC58NVG1S3HBAI6 (PDF), цена TC58NVG1S3HBAI6, Распиновка TC58NVG1S3HBAI6, руководство TC58NVG1S3HBAI6 и решение на замену TC58NVG1S3HBAI6.
TC58NVG1S3HBAI6 FAQ
:
1. What is the maximum operating frequency of the TC58NVG1S3HBAI6 NAND flash memory?
The maximum operating frequency of the TC58NVG1S3HBAI6 NAND flash memory is 104MHz.
2. What is the typical power consumption of the TC58NVG1S3HBAI6 NAND flash memory during read operations?
The typical power consumption of the TC58NVG1S3HBAI6 NAND flash memory during read operations is 30mA.
3. Can the TC58NVG1S3HBAI6 NAND flash memory withstand high temperatures?
Yes, the TC58NVG1S3HBAI6 NAND flash memory is designed to withstand high temperatures up to 85°C.
4. What is the data retention period of the TC58NVG1S3HBAI6 NAND flash memory?
The data retention period of the TC58NVG1S3HBAI6 NAND flash memory is 10 years.
5. Does the TC58NVG1S3HBAI6 NAND flash memory support hardware data protection features?
Yes, the TC58NVG1S3HBAI6 NAND flash memory supports hardware data protection features such as write protection and block locking.
6. What are the available capacities for the TC58NVG1S3HBAI6 NAND flash memory?
The TC58NVG1S3HBAI6 NAND flash memory is available in capacities ranging from 1GB to 16GB.
7. Is the TC58NVG1S3HBAI6 NAND flash memory compatible with 3.3V and 1.8V power supplies?
Yes, the TC58NVG1S3HBAI6 NAND flash memory is compatible with both 3.3V and 1.8V power supplies.
8. What interface standards does the TC58NVG1S3HBAI6 NAND flash memory support?
The TC58NVG1S3HBAI6 NAND flash memory supports the ONFI 2.3 and Toggle 2.0 interface standards.
9. Can the TC58NVG1S3HBAI6 NAND flash memory be used in automotive applications?
Yes, the TC58NVG1S3HBAI6 NAND flash memory is suitable for use in automotive applications, with an extended temperature range of -40°C to 85°C.
10. What is the expected endurance of the TC58NVG1S3HBAI6 NAND flash memory?
The TC58NVG1S3HBAI6 NAND flash memory has an expected endurance of 3,000 program/erase cycles.
The maximum operating frequency of the TC58NVG1S3HBAI6 NAND flash memory is 104MHz.
2. What is the typical power consumption of the TC58NVG1S3HBAI6 NAND flash memory during read operations?
The typical power consumption of the TC58NVG1S3HBAI6 NAND flash memory during read operations is 30mA.
3. Can the TC58NVG1S3HBAI6 NAND flash memory withstand high temperatures?
Yes, the TC58NVG1S3HBAI6 NAND flash memory is designed to withstand high temperatures up to 85°C.
4. What is the data retention period of the TC58NVG1S3HBAI6 NAND flash memory?
The data retention period of the TC58NVG1S3HBAI6 NAND flash memory is 10 years.
5. Does the TC58NVG1S3HBAI6 NAND flash memory support hardware data protection features?
Yes, the TC58NVG1S3HBAI6 NAND flash memory supports hardware data protection features such as write protection and block locking.
6. What are the available capacities for the TC58NVG1S3HBAI6 NAND flash memory?
The TC58NVG1S3HBAI6 NAND flash memory is available in capacities ranging from 1GB to 16GB.
7. Is the TC58NVG1S3HBAI6 NAND flash memory compatible with 3.3V and 1.8V power supplies?
Yes, the TC58NVG1S3HBAI6 NAND flash memory is compatible with both 3.3V and 1.8V power supplies.
8. What interface standards does the TC58NVG1S3HBAI6 NAND flash memory support?
The TC58NVG1S3HBAI6 NAND flash memory supports the ONFI 2.3 and Toggle 2.0 interface standards.
9. Can the TC58NVG1S3HBAI6 NAND flash memory be used in automotive applications?
Yes, the TC58NVG1S3HBAI6 NAND flash memory is suitable for use in automotive applications, with an extended temperature range of -40°C to 85°C.
10. What is the expected endurance of the TC58NVG1S3HBAI6 NAND flash memory?
The TC58NVG1S3HBAI6 NAND flash memory has an expected endurance of 3,000 program/erase cycles.
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