TH58NYG3S0HBAI6 Toshiba Memory America, Inc. IC EEPROM 8GBIT 25NS 67VFBGA
Интегральные схемы (ИС) 67-VFBGA
Номер производителя:
TH58NYG3S0HBAI6
Производитель:
Категория продукции:
Описание:
IC EEPROM 8GBIT 25NS 67VFBGA
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
TH58NYG3S0HBAI6 Таблицы данных(PDF)
Access Time :
25ns
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
8Gb (1G x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
67-VFBGA
Packaging :
Tape & Reel (TR)
Part Status :
Active
Series :
-
Supplier Device Package :
67-VFBGA (6.5x8)
Technology :
FLASH - NAND (SLC)
Voltage - Supply :
1.7 V ~ 1.95 V
Write Cycle Time - Word, Page :
25ns
в наличии
15,503
Unit Price:
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Предложение
TH58NYG3S0HBAI6 Конкурентные цены
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TH58NYG3S0HBAI6 Особенности
TH58NYG3S0HBAI6 is produced by Toshiba Memory America, Inc., belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 67-VFBGA, and Tape & Reel (TR) is its most common packaging method, which belongs to the - series, using 67-VFBGA (6.5x8), 1.7 V ~ 1.95 V is the most suitable voltage.
TH58NYG3S0HBAI6 Подробная информация о продукции
:
TH58NYG3S0HBAI6 — это объем памяти, буферные усилители, разработанные и
произведенные
Toshiba Memory America, Inc..
TH58NYG3S0HBAI6 производства Toshiba Memory America, Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
TH58NYG3S0HBAI6 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных TH58NYG3S0HBAI6 (PDF), цена TH58NYG3S0HBAI6, Распиновка TH58NYG3S0HBAI6, руководство TH58NYG3S0HBAI6 и решение на замену TH58NYG3S0HBAI6.
TH58NYG3S0HBAI6 производства Toshiba Memory America, Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
TH58NYG3S0HBAI6 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных TH58NYG3S0HBAI6 (PDF), цена TH58NYG3S0HBAI6, Распиновка TH58NYG3S0HBAI6, руководство TH58NYG3S0HBAI6 и решение на замену TH58NYG3S0HBAI6.
TH58NYG3S0HBAI6 FAQ
:
1. What is the maximum operating temperature for the TH58NYG3S0HBAI6 NAND flash memory?
The maximum operating temperature for the TH58NYG3S0HBAI6 NAND flash memory is 85°C.
2. What is the typical power consumption of the TH58NYG3S0HBAI6 NAND flash memory during read operations?
The typical power consumption of the TH58NYG3S0HBAI6 NAND flash memory during read operations is 60mA.
3. Can the TH58NYG3S0HBAI6 NAND flash memory be operated at voltages lower than the specified minimum voltage?
Operating the TH58NYG3S0HBAI6 NAND flash memory at voltages lower than the specified minimum voltage is not recommended as it may lead to unreliable operation and potential damage to the device.
4. What are the recommended methods for extending the lifespan of the TH58NYG3S0HBAI6 NAND flash memory?
To extend the lifespan of the TH58NYG3S0HBAI6 NAND flash memory, it is recommended to implement wear-leveling algorithms, error correction codes, and proper voltage and temperature management.
5. Is the TH58NYG3S0HBAI6 NAND flash memory compatible with industrial temperature range applications?
Yes, the TH58NYG3S0HBAI6 NAND flash memory is designed to be compatible with industrial temperature range applications, with an operating temperature range of -40°C to 85°C.
6. What is the maximum clock frequency supported by the TH58NYG3S0HBAI6 NAND flash memory?
The maximum clock frequency supported by the TH58NYG3S0HBAI6 NAND flash memory is 52MHz.
7. Can the TH58NYG3S0HBAI6 NAND flash memory support both synchronous and asynchronous data transfer modes?
Yes, the TH58NYG3S0HBAI6 NAND flash memory can support both synchronous and asynchronous data transfer modes, providing flexibility in system integration.
8. What is the typical program/erase cycle endurance of the TH58NYG3S0HBAI6 NAND flash memory?
The typical program/erase cycle endurance of the TH58NYG3S0HBAI6 NAND flash memory is 3,000 cycles.
9. Does the TH58NYG3S0HBAI6 NAND flash memory incorporate built-in error detection and correction mechanisms?
Yes, the TH58NYG3S0HBAI6 NAND flash memory incorporates built-in error detection and correction mechanisms to ensure data integrity and reliability.
10. What are the available package options for the TH58NYG3S0HBAI6 NAND flash memory?
The TH58NYG3S0HBAI6 NAND flash memory is available in a variety of package options, including TSOP, BGA, and WSON packages to accommodate different design requirements.
The maximum operating temperature for the TH58NYG3S0HBAI6 NAND flash memory is 85°C.
2. What is the typical power consumption of the TH58NYG3S0HBAI6 NAND flash memory during read operations?
The typical power consumption of the TH58NYG3S0HBAI6 NAND flash memory during read operations is 60mA.
3. Can the TH58NYG3S0HBAI6 NAND flash memory be operated at voltages lower than the specified minimum voltage?
Operating the TH58NYG3S0HBAI6 NAND flash memory at voltages lower than the specified minimum voltage is not recommended as it may lead to unreliable operation and potential damage to the device.
4. What are the recommended methods for extending the lifespan of the TH58NYG3S0HBAI6 NAND flash memory?
To extend the lifespan of the TH58NYG3S0HBAI6 NAND flash memory, it is recommended to implement wear-leveling algorithms, error correction codes, and proper voltage and temperature management.
5. Is the TH58NYG3S0HBAI6 NAND flash memory compatible with industrial temperature range applications?
Yes, the TH58NYG3S0HBAI6 NAND flash memory is designed to be compatible with industrial temperature range applications, with an operating temperature range of -40°C to 85°C.
6. What is the maximum clock frequency supported by the TH58NYG3S0HBAI6 NAND flash memory?
The maximum clock frequency supported by the TH58NYG3S0HBAI6 NAND flash memory is 52MHz.
7. Can the TH58NYG3S0HBAI6 NAND flash memory support both synchronous and asynchronous data transfer modes?
Yes, the TH58NYG3S0HBAI6 NAND flash memory can support both synchronous and asynchronous data transfer modes, providing flexibility in system integration.
8. What is the typical program/erase cycle endurance of the TH58NYG3S0HBAI6 NAND flash memory?
The typical program/erase cycle endurance of the TH58NYG3S0HBAI6 NAND flash memory is 3,000 cycles.
9. Does the TH58NYG3S0HBAI6 NAND flash memory incorporate built-in error detection and correction mechanisms?
Yes, the TH58NYG3S0HBAI6 NAND flash memory incorporates built-in error detection and correction mechanisms to ensure data integrity and reliability.
10. What are the available package options for the TH58NYG3S0HBAI6 NAND flash memory?
The TH58NYG3S0HBAI6 NAND flash memory is available in a variety of package options, including TSOP, BGA, and WSON packages to accommodate different design requirements.
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