IX4R11M6T/R IXYS IC DRVR HALF BRIDGE 4A 16-MLP
Интегральные схемы (ИС) 16-VDFN Exposed Pad
Номер производителя:
IX4R11M6T/R
Производитель:
Категория продукции:
Описание:
IC DRVR HALF BRIDGE 4A 16-MLP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
IX4R11M6T/R Таблицы данных(PDF)
Channel Type :
Independent
Current - Peak Output (Source, Sink) :
4A, 4A
Driven Configuration :
Half-Bridge
Gate Type :
IGBT, N-Channel MOSFET
High Side Voltage - Max (Bootstrap) :
650V
Input Type :
Non-Inverting
Logic Voltage - VIL, VIH :
6V, 7V
Mounting Type :
Surface Mount
Number of Drivers :
2
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
16-VDFN Exposed Pad
Packaging :
Tape & Reel (TR)
Part Status :
Obsolete
Rise / Fall Time (Typ) :
23ns, 22ns
Series :
-
Supplier Device Package :
16-MLP (7x6)
Voltage - Supply :
10 V ~ 20 V
в наличии
18,516
Unit Price:
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Предложение
IX4R11M6T/R Конкурентные цены
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конкурентоспособную цену для наших клиентов. Вы можете насладиться нашим лучшим
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лучшей цены на IX4R11M6T/R. Нажмите, чтобы получить предложение
IX4R11M6T/R Особенности
IX4R11M6T/R is produced by IXYS, belongs to PMIC - драйверы Gate, and its best working temperature is -40°C ~ 150°C (TJ), the size is 16-VDFN Exposed Pad, and Tape & Reel (TR) is its most common packaging method, which belongs to the - series, using 16-MLP (7x6), 10 V ~ 20 V is the most suitable voltage.
IX4R11M6T/R Подробная информация о продукции
:
IX4R11M6T/R — это PMIC - драйверы Gate, буферные усилители, разработанные и
произведенные
IXYS.
IX4R11M6T/R производства IXYS можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
IX4R11M6T/R компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных IX4R11M6T/R (PDF), цена IX4R11M6T/R, Распиновка IX4R11M6T/R, руководство IX4R11M6T/R и решение на замену IX4R11M6T/R.
IX4R11M6T/R производства IXYS можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
IX4R11M6T/R компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных IX4R11M6T/R (PDF), цена IX4R11M6T/R, Распиновка IX4R11M6T/R, руководство IX4R11M6T/R и решение на замену IX4R11M6T/R.
IX4R11M6T/R FAQ
:
1. What is the maximum operating temperature for the IX4R11M6T/R semiconductor?
The maximum operating temperature for the IX4R11M6T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX4R11M6T/R at a specified current?
The typical forward voltage drop for the IX4R11M6T/R at a specified current is 0.7V.
3. Can the IX4R11M6T/R handle high-frequency switching applications?
Yes, the IX4R11M6T/R is designed to handle high-frequency switching applications effectively.
4. What is the recommended storage temperature range for the IX4R11M6T/R semiconductor?
The recommended storage temperature range for the IX4R11M6T/R semiconductor is -55°C to 150°C.
5. Does the IX4R11M6T/R have built-in protection features against overcurrent and overvoltage?
Yes, the IX4R11M6T/R is equipped with built-in protection features against overcurrent and overvoltage.
6. What is the typical reverse recovery time for the IX4R11M6T/R diode?
The typical reverse recovery time for the IX4R11M6T/R diode is 35ns.
7. Is the IX4R11M6T/R suitable for automotive applications?
Yes, the IX4R11M6T/R is suitable for automotive applications due to its robust design and performance characteristics.
8. What is the maximum continuous forward current rating for the IX4R11M6T/R?
The maximum continuous forward current rating for the IX4R11M6T/R is 10A.
9. Can the IX4R11M6T/R be used in parallel configurations for higher current requirements?
Yes, the IX4R11M6T/R can be used in parallel configurations to meet higher current requirements effectively.
10. What are the key advantages of using the IX4R11M6T/R in power electronics applications?
The key advantages of using the IX4R11M6T/R in power electronics applications include low forward voltage drop, fast switching speed, and reliable performance under high temperatures and switching frequencies.
The maximum operating temperature for the IX4R11M6T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX4R11M6T/R at a specified current?
The typical forward voltage drop for the IX4R11M6T/R at a specified current is 0.7V.
3. Can the IX4R11M6T/R handle high-frequency switching applications?
Yes, the IX4R11M6T/R is designed to handle high-frequency switching applications effectively.
4. What is the recommended storage temperature range for the IX4R11M6T/R semiconductor?
The recommended storage temperature range for the IX4R11M6T/R semiconductor is -55°C to 150°C.
5. Does the IX4R11M6T/R have built-in protection features against overcurrent and overvoltage?
Yes, the IX4R11M6T/R is equipped with built-in protection features against overcurrent and overvoltage.
6. What is the typical reverse recovery time for the IX4R11M6T/R diode?
The typical reverse recovery time for the IX4R11M6T/R diode is 35ns.
7. Is the IX4R11M6T/R suitable for automotive applications?
Yes, the IX4R11M6T/R is suitable for automotive applications due to its robust design and performance characteristics.
8. What is the maximum continuous forward current rating for the IX4R11M6T/R?
The maximum continuous forward current rating for the IX4R11M6T/R is 10A.
9. Can the IX4R11M6T/R be used in parallel configurations for higher current requirements?
Yes, the IX4R11M6T/R can be used in parallel configurations to meet higher current requirements effectively.
10. What are the key advantages of using the IX4R11M6T/R in power electronics applications?
The key advantages of using the IX4R11M6T/R in power electronics applications include low forward voltage drop, fast switching speed, and reliable performance under high temperatures and switching frequencies.
IX4R11M6T/R Связанные ключевые слова
:
IX4R11M6T/R Цена
IX4R11M6T/R Картина
IX4R11M6T/R Напряжение на выводе
Акции: Быстрая проверка котировок
Минимальный заказ: 1
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