M58BW016FB7T3T TR Micron Technology Inc. IC FLASH 16MBIT 70NS 80QFP
Интегральные схемы (ИС) 80-BQFP
Номер производителя:
M58BW016FB7T3T TR
Производитель:
Категория продукции:
Описание:
IC FLASH 16MBIT 70NS 80QFP
Состояние RoHs:
Таблицы данных:
M58BW016FB7T3T TR Таблицы данных(PDF)
Access Time :
70ns
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
16Mb (512K x 32)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 125°C (TA)
Package / Case :
80-BQFP
Packaging :
Cut Tape (CT)
Part Status :
Obsolete
Series :
-
Supplier Device Package :
80-PQFP (19.9x13.9)
Technology :
FLASH - NOR
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
-
в наличии
51,473
Unit Price:
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Предложение
M58BW016FB7T3T TR Конкурентные цены
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M58BW016FB7T3T TR Особенности
M58BW016FB7T3T TR is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is -40°C ~ 125°C (TA), the size is 80-BQFP, and Cut Tape (CT) is its most common packaging method, which belongs to the - series, using 80-PQFP (19.9x13.9), 2.7 V ~ 3.6 V is the most suitable voltage.
M58BW016FB7T3T TR Подробная информация о продукции
:
M58BW016FB7T3T TR — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
M58BW016FB7T3T TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
M58BW016FB7T3T TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных M58BW016FB7T3T TR (PDF), цена M58BW016FB7T3T TR, Распиновка M58BW016FB7T3T TR, руководство M58BW016FB7T3T TR и решение на замену M58BW016FB7T3T TR.
M58BW016FB7T3T TR производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
M58BW016FB7T3T TR компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных M58BW016FB7T3T TR (PDF), цена M58BW016FB7T3T TR, Распиновка M58BW016FB7T3T TR, руководство M58BW016FB7T3T TR и решение на замену M58BW016FB7T3T TR.
M58BW016FB7T3T TR FAQ
:
1. What is the maximum clock frequency of the M58BW016FB7T3T TR?
The maximum clock frequency of the M58BW016FB7T3T TR is 104 MHz.
2. What is the operating voltage range for this semiconductor?
The operating voltage range for the M58BW016FB7T3T TR is 2.7V to 3.6V.
3. Can you provide details about the memory organization of this semiconductor?
The M58BW016FB7T3T TR has a memory organization of 2M x 8 or 1M x 16.
4. What are the typical standby and active current consumption values for this device?
The typical standby current consumption is 5 µA, and the typical active current consumption is 25 mA.
5. Does this semiconductor support multiple programming voltages?
Yes, the M58BW016FB7T3T TR supports multiple programming voltages ranging from 2.7V to 3.6V.
6. What is the temperature range within which this semiconductor operates reliably?
The M58BW016FB7T3T TR operates reliably within a temperature range of -40°C to 85°C.
7. Can you explain the erase and program times for this semiconductor?
The erase time for the M58BW016FB7T3T TR is typically 2 seconds, and the program time is typically 10 µs per byte.
8. Are there any specific ESD (Electrostatic Discharge) protection measures for handling this semiconductor?
Yes, the M58BW016FB7T3T TR is designed with ESD protection measures exceeding 4000V.
9. What are the package options available for this semiconductor?
The M58BW016FB7T3T TR is available in a variety of package options including TSOP48, TF-BGA64, and WSON8x6.
10. Can you provide information about the data retention capability of this semiconductor?
The data retention capability of the M58BW016FB7T3T TR is 20 years at 85°C.
The maximum clock frequency of the M58BW016FB7T3T TR is 104 MHz.
2. What is the operating voltage range for this semiconductor?
The operating voltage range for the M58BW016FB7T3T TR is 2.7V to 3.6V.
3. Can you provide details about the memory organization of this semiconductor?
The M58BW016FB7T3T TR has a memory organization of 2M x 8 or 1M x 16.
4. What are the typical standby and active current consumption values for this device?
The typical standby current consumption is 5 µA, and the typical active current consumption is 25 mA.
5. Does this semiconductor support multiple programming voltages?
Yes, the M58BW016FB7T3T TR supports multiple programming voltages ranging from 2.7V to 3.6V.
6. What is the temperature range within which this semiconductor operates reliably?
The M58BW016FB7T3T TR operates reliably within a temperature range of -40°C to 85°C.
7. Can you explain the erase and program times for this semiconductor?
The erase time for the M58BW016FB7T3T TR is typically 2 seconds, and the program time is typically 10 µs per byte.
8. Are there any specific ESD (Electrostatic Discharge) protection measures for handling this semiconductor?
Yes, the M58BW016FB7T3T TR is designed with ESD protection measures exceeding 4000V.
9. What are the package options available for this semiconductor?
The M58BW016FB7T3T TR is available in a variety of package options including TSOP48, TF-BGA64, and WSON8x6.
10. Can you provide information about the data retention capability of this semiconductor?
The data retention capability of the M58BW016FB7T3T TR is 20 years at 85°C.
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