N2M400FDB311A3CE Micron Technology Inc. IC FLASH 32GBIT 100LBGA
Интегральные схемы (ИС) 100-LBGA
Номер производителя:
N2M400FDB311A3CE
Производитель:
Категория продукции:
Описание:
IC FLASH 32GBIT 100LBGA
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
Access Time :
-
Clock Frequency :
52MHz
Memory Format :
Flash
Memory Interface :
MMC
Memory Size :
32Gb (4G x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
100-LBGA
Packaging :
Tray
Part Status :
Obsolete
Series :
-
Supplier Device Package :
100-LBGA (14x18)
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
-
в наличии
53,399
Unit Price:
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Предложение
N2M400FDB311A3CE Конкурентные цены
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N2M400FDB311A3CE Особенности
N2M400FDB311A3CE is produced by Micron Technology Inc., belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 100-LBGA, and Tray is its most common packaging method, which belongs to the - series, using 100-LBGA (14x18), 2.7 V ~ 3.6 V is the most suitable voltage.
N2M400FDB311A3CE Подробная информация о продукции
:
N2M400FDB311A3CE — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
N2M400FDB311A3CE производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
N2M400FDB311A3CE компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных N2M400FDB311A3CE (PDF), цена N2M400FDB311A3CE, Распиновка N2M400FDB311A3CE, руководство N2M400FDB311A3CE и решение на замену N2M400FDB311A3CE.
N2M400FDB311A3CE производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
N2M400FDB311A3CE компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных N2M400FDB311A3CE (PDF), цена N2M400FDB311A3CE, Распиновка N2M400FDB311A3CE, руководство N2M400FDB311A3CE и решение на замену N2M400FDB311A3CE.
N2M400FDB311A3CE FAQ
:
1. What is the maximum operating temperature for the N2M400FDB311A3CE discrete semiconductor?
The maximum operating temperature for the N2M400FDB311A3CE discrete semiconductor is 150°C.
2. What is the typical forward voltage drop for the N2M400FDB311A3CE at its rated current?
The typical forward voltage drop for the N2M400FDB311A3CE at its rated current is 0.7V.
3. Can the N2M400FDB311A3CE handle high-frequency switching applications?
Yes, the N2M400FDB311A3CE is designed to handle high-frequency switching applications effectively.
4. What is the maximum continuous current rating for the N2M400FDB311A3CE?
The maximum continuous current rating for the N2M400FDB311A3CE is 10A.
5. Does the N2M400FDB311A3CE require a heat sink for operation?
It is recommended to use a heat sink with the N2M400FDB311A3CE for efficient heat dissipation, especially at higher currents.
6. What is the typical reverse recovery time for the N2M400FDB311A3CE?
The typical reverse recovery time for the N2M400FDB311A3CE is 35ns.
7. Is the N2M400FDB311A3CE suitable for automotive applications?
Yes, the N2M400FDB311A3CE is suitable for automotive applications and complies with relevant industry standards.
8. What is the maximum junction-to-case thermal resistance for the N2M400FDB311A3CE?
The maximum junction-to-case thermal resistance for the N2M400FDB311A3CE is 3.5°C/W.
9. Can the N2M400FDB311A3CE be used in parallel to increase current handling capability?
Yes, the N2M400FDB311A3CE can be used in parallel to increase current handling capability, with proper current sharing considerations.
10. What is the storage temperature range for the N2M400FDB311A3CE?
The storage temperature range for the N2M400FDB311A3CE is -55°C to 175°C.
The maximum operating temperature for the N2M400FDB311A3CE discrete semiconductor is 150°C.
2. What is the typical forward voltage drop for the N2M400FDB311A3CE at its rated current?
The typical forward voltage drop for the N2M400FDB311A3CE at its rated current is 0.7V.
3. Can the N2M400FDB311A3CE handle high-frequency switching applications?
Yes, the N2M400FDB311A3CE is designed to handle high-frequency switching applications effectively.
4. What is the maximum continuous current rating for the N2M400FDB311A3CE?
The maximum continuous current rating for the N2M400FDB311A3CE is 10A.
5. Does the N2M400FDB311A3CE require a heat sink for operation?
It is recommended to use a heat sink with the N2M400FDB311A3CE for efficient heat dissipation, especially at higher currents.
6. What is the typical reverse recovery time for the N2M400FDB311A3CE?
The typical reverse recovery time for the N2M400FDB311A3CE is 35ns.
7. Is the N2M400FDB311A3CE suitable for automotive applications?
Yes, the N2M400FDB311A3CE is suitable for automotive applications and complies with relevant industry standards.
8. What is the maximum junction-to-case thermal resistance for the N2M400FDB311A3CE?
The maximum junction-to-case thermal resistance for the N2M400FDB311A3CE is 3.5°C/W.
9. Can the N2M400FDB311A3CE be used in parallel to increase current handling capability?
Yes, the N2M400FDB311A3CE can be used in parallel to increase current handling capability, with proper current sharing considerations.
10. What is the storage temperature range for the N2M400FDB311A3CE?
The storage temperature range for the N2M400FDB311A3CE is -55°C to 175°C.
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