N01S830BAT22I ON Semiconductor IC SRAM 1MBIT 20MHZ 8TSSOP
Интегральные схемы (ИС) 8-TSSOP (0.173", 4.40mm Width)
Номер производителя:
N01S830BAT22I
Производитель:
Категория продукции:
Описание:
IC SRAM 1MBIT 20MHZ 8TSSOP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
N01S830BAT22I Таблицы данных(PDF)
Access Time :
-
Clock Frequency :
20MHz
Memory Format :
SRAM
Memory Interface :
SPI
Memory Size :
1Mb (128K x 8)
Memory Type :
Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
8-TSSOP (0.173", 4.40mm Width)
Packaging :
Tube
Part Status :
Active
Series :
-
Supplier Device Package :
8-TSSOP
Technology :
SRAM
Voltage - Supply :
2.5 V ~ 5.5 V
Write Cycle Time - Word, Page :
-
в наличии
49,309
Unit Price:
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Предложение
N01S830BAT22I Конкурентные цены
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N01S830BAT22I Особенности
N01S830BAT22I is produced by ON Semiconductor, belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 8-TSSOP (0.173", 4.40mm Width), and Tube is its most common packaging method, which belongs to the - series, using 8-TSSOP, 2.5 V ~ 5.5 V is the most suitable voltage.
N01S830BAT22I Подробная информация о продукции
:
N01S830BAT22I — это объем памяти, буферные усилители, разработанные и
произведенные
ON Semiconductor.
N01S830BAT22I производства ON Semiconductor можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
N01S830BAT22I компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных N01S830BAT22I (PDF), цена N01S830BAT22I, Распиновка N01S830BAT22I, руководство N01S830BAT22I и решение на замену N01S830BAT22I.
N01S830BAT22I производства ON Semiconductor можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
N01S830BAT22I компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных N01S830BAT22I (PDF), цена N01S830BAT22I, Распиновка N01S830BAT22I, руководство N01S830BAT22I и решение на замену N01S830BAT22I.
N01S830BAT22I FAQ
:
1. What is the maximum operating temperature of the N01S830BAT22I semiconductor?
The maximum operating temperature of the N01S830BAT22I semiconductor is 125°C.
2. What is the typical forward voltage drop for the N01S830BAT22I at a specified current?
The typical forward voltage drop for the N01S830BAT22I at a specified current is 0.7V.
3. Can the N01S830BAT22I handle high-frequency applications?
Yes, the N01S830BAT22I is designed to handle high-frequency applications effectively.
4. What is the recommended storage temperature range for the N01S830BAT22I semiconductor?
The recommended storage temperature range for the N01S830BAT22I semiconductor is -55°C to 150°C.
5. Does the N01S830BAT22I have built-in protection features against overcurrent or overvoltage?
Yes, the N01S830BAT22I is equipped with built-in protection features against overcurrent and overvoltage.
6. What is the typical reverse recovery time of the N01S830BAT22I?
The typical reverse recovery time of the N01S830BAT22I is 35ns.
7. Is the N01S830BAT22I suitable for automotive applications?
Yes, the N01S830BAT22I is suitable for automotive applications due to its robust design and performance.
8. What is the maximum continuous forward current rating of the N01S830BAT22I?
The maximum continuous forward current rating of the N01S830BAT22I is 3A.
9. Can the N01S830BAT22I be used in parallel to increase current handling capability?
Yes, the N01S830BAT22I can be used in parallel to increase current handling capability in certain applications.
10. What are the key differences between the N01S830BAT22I and its previous generation counterpart?
The key differences between the N01S830BAT22I and its previous generation counterpart include improved efficiency, lower forward voltage, and enhanced thermal performance.
The maximum operating temperature of the N01S830BAT22I semiconductor is 125°C.
2. What is the typical forward voltage drop for the N01S830BAT22I at a specified current?
The typical forward voltage drop for the N01S830BAT22I at a specified current is 0.7V.
3. Can the N01S830BAT22I handle high-frequency applications?
Yes, the N01S830BAT22I is designed to handle high-frequency applications effectively.
4. What is the recommended storage temperature range for the N01S830BAT22I semiconductor?
The recommended storage temperature range for the N01S830BAT22I semiconductor is -55°C to 150°C.
5. Does the N01S830BAT22I have built-in protection features against overcurrent or overvoltage?
Yes, the N01S830BAT22I is equipped with built-in protection features against overcurrent and overvoltage.
6. What is the typical reverse recovery time of the N01S830BAT22I?
The typical reverse recovery time of the N01S830BAT22I is 35ns.
7. Is the N01S830BAT22I suitable for automotive applications?
Yes, the N01S830BAT22I is suitable for automotive applications due to its robust design and performance.
8. What is the maximum continuous forward current rating of the N01S830BAT22I?
The maximum continuous forward current rating of the N01S830BAT22I is 3A.
9. Can the N01S830BAT22I be used in parallel to increase current handling capability?
Yes, the N01S830BAT22I can be used in parallel to increase current handling capability in certain applications.
10. What are the key differences between the N01S830BAT22I and its previous generation counterpart?
The key differences between the N01S830BAT22I and its previous generation counterpart include improved efficiency, lower forward voltage, and enhanced thermal performance.
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